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This article is cited in 2 scientific papers (total in 2 papers)
Semiconductor physics
Evaluation of the impact of surface recombination in microdisk lasers by means of high-frequency modulation
A. E. Zhukovab, È. I. Moiseeva, N. V. Kryzhanovskayaab, S. A. Blokhinc, M. M. Kulaginac, Yu. A. Gusevac, S. A. Mintairovac, N. A. Kalyuzhnyyac, A. M. Mozharova, F. I. Zubova, M. V. Maksimova a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Peter the Great St. Petersburg Polytechnic University
c Ioffe Institute, St. Petersburg
Abstract:
Microdisk lasers 10–30 $\mu$m in diameter operating at room temperature without thermal stabilization and with an active region based on nanostructures of hybrid dimensionality–quantum wells–dots–are investigated. High-frequency measurements of the microlaser response are performed in the direct small-signal modulation mode, which makes it possible to establish the parameters of the operating speed and analyze their dependence on the microlaser diameter. It is found that the K factor is (0.8 $\pm$ 0.2) ns, which corresponds to optical losses of $\sim$6 cm$^{-1}$, and no regular dependence on the diameter is observed. It is found that the low-frequency component of the damping coefficient of relaxation oscillations is inversely proportional to the diameter. This character of the dependence evidences a decrease in the carrier lifetime in small-diameter microcavities, which can be associated with the prevalence of nonradiative recombination on their side walls.
Keywords:
microcavity, microlaser, surface recombination, high-frequency modulation.
Received: 11.03.2019 Revised: 18.03.2019 Accepted: 18.03.2019
Citation:
A. E. Zhukov, È. I. Moiseev, N. V. Kryzhanovskaya, S. A. Blokhin, M. M. Kulagina, Yu. A. Guseva, S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Mozharov, F. I. Zubov, M. V. Maksimov, “Evaluation of the impact of surface recombination in microdisk lasers by means of high-frequency modulation”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1122–1127; Semiconductors, 53:8 (2019), 1099–1103
Linking options:
https://www.mathnet.ru/eng/phts5439 https://www.mathnet.ru/eng/phts/v53/i8/p1122
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