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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 24, Pages 11–14
DOI: https://doi.org/10.21883/PJTF.2020.24.50420.18485 (Mi pjtf4905) 		 
This article is cited in 1 scientific paper (total in 1 paper)

High-speed photodetectors for the 950–1100 nm optical range based on In$_{0.4}$Ga$_{0.6}$As/GaAs quantum well-dot nanostructures

S. A. Mintairovab, I. M. Gadzhievb, N. A. Kalyuzhnyyb, M. V. Maksimovac, A. M. Nadtochiyac, M. V. Nakhimovichb, R. A. Saliib, M. Z. Shvartsb, A. E. Zhukovc

a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Ioffe Institute, St. Petersburg
c National Research University "Higher School of Economics", St. Petersburg Branch
Full-text PDF (270 kB) Citations (1)
DOI: https://doi.org/10.21883/PJTF.2020.24.50420.18485
Abstract: High-speed photodetectors (PDs) based on InGaAs/GaAs quantum well-dot (QWD) nanostructures with the frontal-end and back-end input of radiation have been studied. A PD with 40 rows of QWDs exhibited a spectral responsivity of up to 0.4 A/W in the 950–1100 nm optical range at a –5-V bias voltage. The decay time constant of pulsed response for PDs with an input area of 1.4 $\times$ 10$^{-4}$ cm$^2$ was $\sim$250 ps.
Keywords: photodetector, high-speed operation, spectral responsivity, nanostructures, capacitance.
Funding agency Grant number
Russian Science Foundation 16-12-10269
This work was supported in part by the Russian Science Foundation, project no. 16-12-10269.
Received: 28.07.2020
Revised: 08.09.2020
Accepted: 08.09.2020
English version:
Technical Physics Letters, 2020, Volume 46, Issue 12, Pages 1219–1222
DOI: https://doi.org/10.1134/S106378502012024X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. A. Mintairov, I. M. Gadzhiev, N. A. Kalyuzhnyy, M. V. Maksimov, A. M. Nadtochiy, M. V. Nakhimovich, R. A. Salii, M. Z. Shvarts, A. E. Zhukov, “High-speed photodetectors for the 950–1100 nm optical range based on In$_{0.4}$Ga$_{0.6}$As/GaAs quantum well-dot nanostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020), 11–14; Tech. Phys. Lett., 46:12 (2020), 1219–1222
Citation in format AMSBIB
\Bibitem{MinGadKal20}
\by S.~A.~Mintairov, I.~M.~Gadzhiev, N.~A.~Kalyuzhnyy, M.~V.~Maksimov, A.~M.~Nadtochiy, M.~V.~Nakhimovich, R.~A.~Salii, M.~Z.~Shvarts, A.~E.~Zhukov
\paper High-speed photodetectors for the 950--1100 nm optical range based on In$_{0.4}$Ga$_{0.6}$As/GaAs quantum well-dot nanostructures
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 46
\issue 24
\pages 11--14
\mathnet{http://mi.mathnet.ru/pjtf4905}
\crossref{https://doi.org/10.21883/PJTF.2020.24.50420.18485}
\elib{https://elibrary.ru/item.asp?id=44574281}
\transl
\jour Tech. Phys. Lett.
\yr 2020
\vol 46
\issue 12
\pages 1219--1222
\crossref{https://doi.org/10.1134/S106378502012024X}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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