|
Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 4, Pages 525–530
(Mi phts6496)
|
|
|
|
This article is cited in 10 scientific papers (total in 10 papers)
Semiconductor physics
Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates
S. A. Mintairov, V. M. Emelyanov, D. V. Rybalchenko, R. A. Salii, N. Kh. Timoshina, M. Z. Shvarts, N. A. Kalyuzhnyy Ioffe Institute, St. Petersburg
Abstract:
Heterostructures of metamorphic GaInAs photovoltaic converters (PVCs) are on GaAs substrates by the metal-organic chemical vapor deposition (MOCVD) method. It is shown that using a multilayer metamorphic buffer with a step of 2.5% in indium content and layer thicknesses of 120 nm provides the high quality of bulk layers subsequently grown on the buffer up to an indium content of 24%. PVCs with a long-wavelength photosensitivity edge up to 1300 nm and a quantum efficiency of $\sim$80% in the spectral range 1050–1100 nm are fabricated. Analysis of the open-circuit voltage of the PVCs and diffusion lengths of minority carriers in the layers demonstrates that the density of misfit dislocations penetrating into the bulk layers increases at an indium content exceeding 10%.
Keywords:
GaAs Substrate, Misfit Dislocation, Indium Content,Base Thickness, Bulk Layer.
Received: 27.07.2015 Accepted: 28.08.2015
Citation:
S. A. Mintairov, V. M. Emelyanov, D. V. Rybalchenko, R. A. Salii, N. Kh. Timoshina, M. Z. Shvarts, N. A. Kalyuzhnyy, “Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 525–530; Semiconductors, 50:4 (2016), 517–522
Linking options:
https://www.mathnet.ru/eng/phts6496 https://www.mathnet.ru/eng/phts/v50/i4/p525
|
Statistics & downloads: |
Abstract page: | 33 | Full-text PDF : | 15 |
|