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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 8, Pages 699–703
DOI: https://doi.org/10.21883/FTP.2021.08.51143.9665 (Mi phts5004) 		 
This article is cited in 6 scientific papers (total in 6 papers)

Semiconductor physics

Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector

A. V. Malevskayaa, N. A. Kalyuzhnyya, D. A. Malevskiia, S. A. Mintairova, A. M. Nadtochiyb, M. V. Nakhimovicha, F. Yu. Soldatenkova, M. Z. Shvartsa, V. M. Andreeva

a Ioffe Institute, St. Petersburg
b National Research University "Higher School of Economics", St. Petersburg Branch
Full-text PDF (661 kB) Citations (6)
DOI: https://doi.org/10.21883/FTP.2021.08.51143.9665
Abstract: Investigation of IR light emitting diodes (wavelength 850 nm) based on heterostructures AlGaAs/GaAs with multiple quantum wells InGaAs in the region generating radiation, grown by the MOCVD technique, has been carried out. Post-growth technologies for removing the growth substrate GaAs and for transfer the heterostructure on an alien carrier with an optical reflector have been developed. Technological regimes for fabricating the reflector has been optimized and the increase of the IR radiation reflection coefficient up to 92–93% has been achieved. Light-emitting diodes with the external quantum efficiency of 28.5% have been fabricated.
Keywords: light-emitting diode, heterostructures AlGaAs/GaAs, quantum wells InGaAs, texturing, reflectors.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation
A.М. Nadtochiy thanks for the support in investigations by the photoluminescence method the Program of fundamental investigations of National Research University Higher School of Economics in 2021.
Received: 09.04.2021
Revised: 19.04.2021
Accepted: 19.04.2021
English version:
Semiconductors, 2021, Volume 55, Issue 8, Pages 686–690
DOI: https://doi.org/10.1134/S1063782621080121
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Malevskaya, N. A. Kalyuzhnyy, D. A. Malevskii, S. A. Mintairov, A. M. Nadtochiy, M. V. Nakhimovich, F. Yu. Soldatenkov, M. Z. Shvarts, V. M. Andreev, “Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 699–703; Semiconductors, 55:8 (2021), 686–690
Citation in format AMSBIB
\Bibitem{MalKalMal21}
\by A.~V.~Malevskaya, N.~A.~Kalyuzhnyy, D.~A.~Malevskii, S.~A.~Mintairov, A.~M.~Nadtochiy, M.~V.~Nakhimovich, F.~Yu.~Soldatenkov, M.~Z.~Shvarts, V.~M.~Andreev
\paper Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and ``back'' reflector
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 8
\pages 699--703
\mathnet{http://mi.mathnet.ru/phts5004}
\crossref{https://doi.org/10.21883/FTP.2021.08.51143.9665}
\elib{https://elibrary.ru/item.asp?id=46480625}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 8
\pages 686--690
\crossref{https://doi.org/10.1134/S1063782621080121}
Linking options:
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  • https://www.mathnet.ru/eng/phts/v55/i8/p699
    • This publication is cited in the following 6 articles:
    1. A.V. Malevskaya, F.Yu. Soldatenkov, R.V. Levin, N.A. Kalyuzhnyy, M.Z. Shvarts, “Low Temperature Ohmic Contact for High-Power AlGaAs/GaAs Photovoltaic Converters”, Vacuum, 2025, 114030  crossref
    2. Zhiwei Yang, Asim Abas, Yuanxun Cao, “Research of ultra-low concentration ion implantation on chip substrates using film delamination method combined with semiconductor simulation technology”, Innov. Emerg. Technol., 12 (2025)  crossref
    3. R. A. Salii, A. V. Malevskaya, D. A. Malevskii, S. A. Mintairov, A. M. Nadtochiy, N. A. Kalyuzhnyy, “Light-emitting AlGaAs/GaAs diodes based on ingaas strain-compensated quantum wells with minimized internal losses OF 940 nm radiation absorption”, Kristallografiâ, 69:4 (2024), 743  crossref
    4. R. A. Salii, A. V. Malevskaya, D. A. Malevskii, S. A. Mintairov, A. M. Nadtochiy, N. A. Kalyuzhnyy, “Light-Emitting AlGaAs/GaAs Diodes Based on InGaAs Strain-Compensated Quantum Wells with Minimized Internal Losses Caused by 940-nm Radiation Absorption”, Crystallogr. Rep., 69:4 (2024), 620  crossref
    5. A. V. Malevskaya, N. A. Kalyuzhnyy, F. Y. Soldatenkov, R. V. Levin, R. A. Salii, D. A. Malevskii, P. V. Pokrovskii, V. R. Larionov, V. M. Andreev, “Investigation of Power IR (850 nm) Light-Emitting Diodes Manufacturing by Lift-Off Technique of AlGaAs–GaAs-Heterostructure to Carrier-Substrate”, Tech. Phys., 68:12 (2023), 663  crossref
    6. A. V. Malevskaya, N. A. Kalyuzhnyy, S. A. Mintairov, R. A. Salii, D. A. Malevskii, M. V. Nakhimovich, V. R. Larionov, P. V. Pokrovskii, M. Z. Shvarts, V. M. Andreev, “High Efficiency (EQE = 37.5”, Semiconductors, 57:5 (2023), 252  crossref
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