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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 19, Pages 37–39
DOI: https://doi.org/10.21883/PJTF.2019.19.48316.17938 (Mi pjtf5308) 		 
This article is cited in 7 scientific papers (total in 7 papers)

Specific features of the current–voltage characteristic of microdisk lasers based on InGaAs/GaAs quantum well-dots

F. I. Zubova, È. I. Moiseeva, G. O. Kornyshova, N. V. Kryzhanovskayaa, Yu. M. Shernyakovb, A. S. Payusovb, M. M. Kulaginab, N. A. Kalyuzhnyyb, S. A. Mintairovb, M. V. Maksimova, A. E. Zhukova

a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Ioffe Institute, St. Petersburg
Full-text PDF (175 kB) Citations (7)
DOI: https://doi.org/10.21883/PJTF.2019.19.48316.17938
Abstract: Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots, formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about 1.5 $\mu$m is formed near the side surface, which leads to a decrease in the effective current flow area.
Keywords: diode laser, microlaser, quantum dots, current-voltage characteristic.
Funding agency Grant number
Russian Foundation for Basic Research 16-29-03127-ÎÔÈ-Ì
Ministry of Education and Science of the Russian Federation 3.9787.2017/8.9
The study was supported by the Russian Foundation for Basic Research (project no. 16-29-03127-OFI-M) and Ministry of Science and Higher Education of the Russian Federation (3.9787.2017/8.9).
Received: 19.06.2019
Revised: 19.06.2019
Accepted: 20.06.2019
English version:
Technical Physics Letters, 2019, Volume 45, Issue 10, Pages 994–996
DOI: https://doi.org/10.1134/S1063785019100158
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: F. I. Zubov, È. I. Moiseev, G. O. Kornyshov, N. V. Kryzhanovskaya, Yu. M. Shernyakov, A. S. Payusov, M. M. Kulagina, N. A. Kalyuzhnyy, S. A. Mintairov, M. V. Maksimov, A. E. Zhukov, “Specific features of the current–voltage characteristic of microdisk lasers based on InGaAs/GaAs quantum well-dots”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019), 37–39; Tech. Phys. Lett., 45:10 (2019), 994–996
Citation in format AMSBIB
\Bibitem{ZubMoiKor19}
\by F.~I.~Zubov, \`E.~I.~Moiseev, G.~O.~Kornyshov, N.~V.~Kryzhanovskaya, Yu.~M.~Shernyakov, A.~S.~Payusov, M.~M.~Kulagina, N.~A.~Kalyuzhnyy, S.~A.~Mintairov, M.~V.~Maksimov, A.~E.~Zhukov
\paper Specific features of the current–voltage characteristic of microdisk lasers based on InGaAs/GaAs quantum well-dots
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 19
\pages 37--39
\mathnet{http://mi.mathnet.ru/pjtf5308}
\crossref{https://doi.org/10.21883/PJTF.2019.19.48316.17938}
\elib{https://elibrary.ru/item.asp?id=41300892}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 10
\pages 994--996
\crossref{https://doi.org/10.1134/S1063785019100158}
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    • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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