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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 7, Pages 614–617
DOI: https://doi.org/10.21883/FTP.2021.07.51028.9646 (Mi phts5018) 		 
This article is cited in 5 scientific papers (total in 5 papers)

Semiconductor physics

Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector

A. V. Malevskaya, N. A. Kalyuzhnyy, D. A. Malevskii, S. A. Mintairov, R. A. Salii, A. N. Panchak, P. V. Pokrovskii, N. S. Potapovich, V. M. Andreev

Ioffe Institute, St. Petersburg
Full-text PDF (202 kB) Citations (5)
DOI: https://doi.org/10.21883/FTP.2021.07.51028.9646
Abstract: Investigation of IR light emitting diodes (wavelength 850 nm) based on AlGaAs/GaAs heterostructures with multiple quantum wells in the region generating radiation grown by the MOCVD technique has been carried out. Post-growth technologies for removing the substrate and for transfer the heterostructure on an alien carrier with an optical reflector have been developed. Technological regimes for fabricating the reflector have been optimized, and the increase of the IR radiation reflection coefficient up to 92–93% has been achieved. Light-emitting diodes with the external quantum efficiency 28.5% have been fabricated.
Keywords: light-emitting diode, AlGaAs/GaAs heterostructures, InGaAs quantum wells, texturing, reflectors.
Received: 09.03.2021
Revised: 15.03.2021
Accepted: 15.03.2021
English version:
Semiconductors, 2021, Volume 55, Issue 8, Pages 686–690
DOI: https://doi.org/10.1134/S1063782621080121
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Malevskaya, N. A. Kalyuzhnyy, D. A. Malevskii, S. A. Mintairov, R. A. Salii, A. N. Panchak, P. V. Pokrovskii, N. S. Potapovich, V. M. Andreev, “Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector”, Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 614–617; Semiconductors, 55:8 (2021), 686–690
Citation in format AMSBIB
\Bibitem{MalKalMal21}
\by A.~V.~Malevskaya, N.~A.~Kalyuzhnyy, D.~A.~Malevskii, S.~A.~Mintairov, R.~A.~Salii, A.~N.~Panchak, P.~V.~Pokrovskii, N.~S.~Potapovich, V.~M.~Andreev
\paper Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and ``back'' reflector
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 7
\pages 614--617
\mathnet{http://mi.mathnet.ru/phts5018}
\crossref{https://doi.org/10.21883/FTP.2021.07.51028.9646}
\elib{https://elibrary.ru/item.asp?id=46488617}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 8
\pages 686--690
\crossref{https://doi.org/10.1134/S1063782621080121}
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    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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