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This article is cited in 2 scientific papers (total in 2 papers)
Optical properties of InGaAs/InAlAs metamorphic nanoheterostructures for photovoltaic converters of laser and solar radiation
V. M. Emelyanov, N. A. Kalyuzhnyy, S. A. Mintairov, M. Z. Shvarts Ioffe Institute, St. Petersburg
Abstract:
Reflectance spectroscopy has been used to determine the refractive indices of nanoscale In$_{x}$Al$_{y}$Ga$_{1-x-y}$As and In$_{x}$Al$_{1-x}$As layers with indium and aluminum concentrations $x$ = 0.21–0.24 and $y$ = 0, 0.1, and 0.2 on specially created Bragg-reflector heterostructures at wavelengths in the range 700–2000 nm. It was demonstrated that the method based on an analysis of the auto- and cross-correlation coefficients of the wavelength derivatives of the dependence of the reflectance of structures of this kind in order to determine the dispersion curves of the materials forming a reflector. It was found that raising the concentration of indium in InGaAs and AlInAs leads to a substantial rise in the refractive index, with a preserved spectral run of the refractive indices, which is characteristic of gallium arsenide and aluminum arsenide.
Received: 25.06.2018
Citation:
V. M. Emelyanov, N. A. Kalyuzhnyy, S. A. Mintairov, M. Z. Shvarts, “Optical properties of InGaAs/InAlAs metamorphic nanoheterostructures for photovoltaic converters of laser and solar radiation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:19 (2018), 50–58; Tech. Phys. Lett., 44:10 (2018), 877–880
Linking options:
https://www.mathnet.ru/eng/pjtf5679 https://www.mathnet.ru/eng/pjtf/v44/i19/p50
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