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This article is cited in 2 scientific papers (total in 2 papers)
Semiconductor physics
Counteracting the photovoltaic effect in the top intergenerator part of GaInP/GaAs/Ge solar cells
M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, M. Z. Shvarts, N. A. Kalyuzhnyy Ioffe Institute, St. Petersburg
Abstract:
The “top” intergenerator part situated between the GaInP and GaAs subcells (electric power generators) is analyzed. The shape of the light current–voltage characteristics and the $V_{oc}$–$J_{sc}$ (open-circuit voltage–short-circuit current) dependence are examined. It is found that the $p^{+}$–$n^{+}$-tunnel heterojunction situated in the “top” intergenerator part can operate as a photoelectric source counteracting the base $p$–$n$ junctions. In this case, the $V_{oc}$–$J_{sc}$ characteristic has a descending part, and a sharp jump can be observed. This undesirable effect becomes weaker with increasing peak current of the tunnel junction.
Keywords:
multiple-junction solar cells, concentrated solar light, photovoltaic characteristics, current–voltage characteristics, counteracting electromotive, force, tunnel diode.
Received: 13.06.2019 Revised: 21.06.2019 Accepted: 21.06.2019
Citation:
M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, M. Z. Shvarts, N. A. Kalyuzhnyy, “Counteracting the photovoltaic effect in the top intergenerator part of GaInP/GaAs/Ge solar cells”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1568–1572; Semiconductors, 53:11 (2019), 1535–1539
Linking options:
https://www.mathnet.ru/eng/phts5366 https://www.mathnet.ru/eng/phts/v53/i11/p1568
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