Experimental and theoretical examination of the photosensitivity spectra of structures with In$_{0.4}$Ga$_{0.6}$As quantum well-dots of the optical range (900–1050 nm)

Investigation of photovoltaic converters based on a novel type of nanostructures referred to as quantum-well dots (QWD) which represents In$_{0.4}$Ga$_{0.6}$As layer with pronounced modulation of composition and thickness was carried out. The energies of the optical transitions in QWD were found to be very close light and heavy hole based transitions in the quantum well of similar composition and thickness. QWD ground state peak was found to be strongly TE polarized ( $>$ 70%), whereas the short-wavelength peak is nearly unpolarized ( $<$ 10%).