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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 11, Pages 1520–1526
DOI: https://doi.org/10.21883/FTP.2019.11.48448.9167 (Mi phts5358) 		 
This article is cited in 4 scientific papers (total in 4 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Time-resolved photoluminescence of InGaAs nanostructures different in quantum dimensionality

A. M. Nadtochiya, S. A. Mintairovb, N. A. Kalyuzhnyyb, M. V. Maksimova, D. A. Sannikovcd, T. F. Yagafarovc, A. E. Zhukova

a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Ioffe Institute, St. Petersburg
c Skolkovo Institute of Science and Technology
d P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
Full-text PDF (274 kB) Citations (4)
DOI: https://doi.org/10.21883/FTP.2019.11.48448.9167
Abstract: The time-resolved photoluminescence of quantum-confined InGaAs heterostructures grown on GaAs substrates is studied by time-correlated single photon counting. The heterostructures have different dimensionalities: the structures are formed as quantum dots, quantum wells, and structures of transition dimensionality (quantum well-dots). It is found that the room-temperature photoluminescence decay time of the samples substantially depends on their dimensionality and corresponds to 6, 7, and $>$ 20 ns for quantum dots, well-dots, and wells, respectively. It is thought that the presence of localization centers for charge carriers can be responsible for the experimentally observed shortening of the photoluminescence time in the heterostructures.
Keywords: photoluminescence, time resolution, quantum-confined structures.
Funding agency Grant number
Russian Science Foundation 16-12-10269
The study was supported by the Russian Science Foundation, project no. 16-12-10269.
Received: 22.05.2019
Revised: 27.05.2019
Accepted: 30.05.2019
English version:
Semiconductors, 2019, Volume 53, Issue 11, Pages 1489–1495
DOI: https://doi.org/10.1134/S1063782619110150
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. M. Nadtochiy, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maksimov, D. A. Sannikov, T. F. Yagafarov, A. E. Zhukov, “Time-resolved photoluminescence of InGaAs nanostructures different in quantum dimensionality”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1520–1526; Semiconductors, 53:11 (2019), 1489–1495
Citation in format AMSBIB
\Bibitem{NadMinKal19}
\by A.~M.~Nadtochiy, S.~A.~Mintairov, N.~A.~Kalyuzhnyy, M.~V.~Maksimov, D.~A.~Sannikov, T.~F.~Yagafarov, A.~E.~Zhukov
\paper Time-resolved photoluminescence of InGaAs nanostructures different in quantum dimensionality
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 11
\pages 1520--1526
\mathnet{http://mi.mathnet.ru/phts5358}
\crossref{https://doi.org/10.21883/FTP.2019.11.48448.9167}
\elib{https://elibrary.ru/item.asp?id=41300652}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 11
\pages 1489--1495
\crossref{https://doi.org/10.1134/S1063782619110150}
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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