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This article is cited in 4 scientific papers (total in 4 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Time-resolved photoluminescence of InGaAs nanostructures different in quantum dimensionality
A. M. Nadtochiya, S. A. Mintairovb, N. A. Kalyuzhnyyb, M. V. Maksimova, D. A. Sannikovcd, T. F. Yagafarovc, A. E. Zhukova a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Ioffe Institute, St. Petersburg
c Skolkovo Institute of Science and Technology
d P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
Abstract:
The time-resolved photoluminescence of quantum-confined InGaAs heterostructures grown on GaAs substrates is studied by time-correlated single photon counting. The heterostructures have different dimensionalities: the structures are formed as quantum dots, quantum wells, and structures of transition dimensionality (quantum well-dots). It is found that the room-temperature photoluminescence decay time of the samples substantially depends on their dimensionality and corresponds to 6, 7, and $>$ 20 ns for quantum dots, well-dots, and wells, respectively. It is thought that the presence of localization centers for charge carriers can be responsible for the experimentally observed shortening of the photoluminescence time in the heterostructures.
Keywords:
photoluminescence, time resolution, quantum-confined structures.
Received: 22.05.2019 Revised: 27.05.2019 Accepted: 30.05.2019
Citation:
A. M. Nadtochiy, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maksimov, D. A. Sannikov, T. F. Yagafarov, A. E. Zhukov, “Time-resolved photoluminescence of InGaAs nanostructures different in quantum dimensionality”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1520–1526; Semiconductors, 53:11 (2019), 1489–1495
Linking options:
https://www.mathnet.ru/eng/phts5358 https://www.mathnet.ru/eng/phts/v53/i11/p1520
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