Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 12, Pages 1218–1222
DOI: https://doi.org/10.21883/FTP.2021.12.51709.9711 (Mi phts4920) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Semiconductor physics

High efficiency (EQE = 37.5%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors

A. V. Malevskaya, N. A. Kalyuzhnyy, S. A. Mintairov, R. A. Salii, D. A. Malevskii, M. V. Nakhimovich, V. R. Larionov, P. V. Pokrovskii, M. Z. Shvarts, V. M. Andreev

Ioffe Institute, St. Petersburg
Full-text PDF (1544 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2021.12.51709.9711
Abstract: Developed and investigated are IR (850nm) light-emitting diodes based on AlGaAs/Ga(In)As heterostructures grown by the MOC-hydride epitaxy technique with multiple quantum wells in the active region and with a double optical reflector consisted of a multilayerAl$_{0.9}$Ga$_{0.1}$As/Al$_{0.1}$Ga$_{0.9}$As Bragg heterostructure and an Ag mirror layer. Light-emitting diodes with the external quantum efficiency (EQE) of 37.5% at current densities greater than 10A/cm$^2$ have been fabricated.
Keywords: IR light-emitting diode, AlGaAs/GaAs heterostructure, Bragg reflector, inGaAs quantum wells.
Received: 08.07.2021
Revised: 02.08.2021
Accepted: 02.08.2021
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Malevskaya, N. A. Kalyuzhnyy, S. A. Mintairov, R. A. Salii, D. A. Malevskii, M. V. Nakhimovich, V. R. Larionov, P. V. Pokrovskii, M. Z. Shvarts, V. M. Andreev, “High efficiency (EQE = 37.5%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1218–1222
Citation in format AMSBIB
\Bibitem{MalKalMin21}
\by A.~V.~Malevskaya, N.~A.~Kalyuzhnyy, S.~A.~Mintairov, R.~A.~Salii, D.~A.~Malevskii, M.~V.~Nakhimovich, V.~R.~Larionov, P.~V.~Pokrovskii, M.~Z.~Shvarts, V.~M.~Andreev
\paper High efficiency (EQE = 37.5\%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 12
\pages 1218--1222
\mathnet{http://mi.mathnet.ru/phts4920}
\crossref{https://doi.org/10.21883/FTP.2021.12.51709.9711}
\elib{https://elibrary.ru/item.asp?id=46667394}
Linking options:
  • https://www.mathnet.ru/eng/phts4920
  • https://www.mathnet.ru/eng/phts/v55/i12/p1218
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:108
    Full-text PDF :35
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024