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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 12, Pages 1218–1222
DOI: https://doi.org/10.21883/FTP.2021.12.51709.9711 (Mi phts4920) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Semiconductor physics

High efficiency (EQE = 37.5%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors

A. V. Malevskaya, N. A. Kalyuzhnyy, S. A. Mintairov, R. A. Salii, D. A. Malevskii, M. V. Nakhimovich, V. R. Larionov, P. V. Pokrovskii, M. Z. Shvarts, V. M. Andreev

Ioffe Institute, St. Petersburg
Full-text PDF (1544 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2021.12.51709.9711
Abstract: Developed and investigated are IR (850nm) light-emitting diodes based on AlGaAs/Ga(In)As heterostructures grown by the MOC-hydride epitaxy technique with multiple quantum wells in the active region and with a double optical reflector consisted of a multilayerAl0.9Ga0.1As/Al0.1Ga0.9As Bragg heterostructure and an Ag mirror layer. Light-emitting diodes with the external quantum efficiency (EQE) of 37.5% at current densities greater than 10A/cm2 have been fabricated.
Keywords: IR light-emitting diode, AlGaAs/GaAs heterostructure, Bragg reflector, inGaAs quantum wells.
Received: 08.07.2021
Revised: 02.08.2021
Accepted: 02.08.2021
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Malevskaya, N. A. Kalyuzhnyy, S. A. Mintairov, R. A. Salii, D. A. Malevskii, M. V. Nakhimovich, V. R. Larionov, P. V. Pokrovskii, M. Z. Shvarts, V. M. Andreev, “High efficiency (EQE = 37.5%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1218–1222
Citation in format AMSBIB
\Bibitem{MalKalMin21}
\by A.~V.~Malevskaya, N.~A.~Kalyuzhnyy, S.~A.~Mintairov, R.~A.~Salii, D.~A.~Malevskii, M.~V.~Nakhimovich, V.~R.~Larionov, P.~V.~Pokrovskii, M.~Z.~Shvarts, V.~M.~Andreev
\paper High efficiency (EQE = 37.5\%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 12
\pages 1218--1222
\mathnet{http://mi.mathnet.ru/phts4920}
\crossref{https://doi.org/10.21883/FTP.2021.12.51709.9711}
\elib{https://elibrary.ru/item.asp?id=46667394}
Linking options:
  • https://www.mathnet.ru/eng/phts4920
  • https://www.mathnet.ru/eng/phts/v55/i12/p1218
    • This publication is cited in the following 2 articles:
    1. R. A. Salii, A. V. Malevskaya, D. A. Malevskii, S. A. Mintairov, A. M. Nadtochiy, N. A. Kalyuzhnyy, “Light-emitting AlGaAs/GaAs diodes based on ingaas strain-compensated quantum wells with minimized internal losses OF 940 nm radiation absorption”, Kristallografiâ, 69:4 (2024), 743  crossref
    2. R. A. Salii, A. V. Malevskaya, D. A. Malevskii, S. A. Mintairov, A. M. Nadtochiy, N. A. Kalyuzhnyy, “Light-Emitting AlGaAs/GaAs Diodes Based on InGaAs Strain-Compensated Quantum Wells with Minimized Internal Losses Caused by 940-nm Radiation Absorption”, Crystallogr. Rep., 69:4 (2024), 620  crossref
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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