Abstract:
Developed and investigated are IR (850nm) light-emitting diodes based on AlGaAs/Ga(In)As heterostructures grown by the MOC-hydride epitaxy technique with multiple quantum wells in the active region and with a double optical reflector consisted of a multilayerAl$_{0.9}$Ga$_{0.1}$As/Al$_{0.1}$Ga$_{0.9}$As Bragg heterostructure and an Ag mirror layer. Light-emitting diodes with the external quantum efficiency (EQE) of 37.5% at current densities greater than 10A/cm$^2$ have been fabricated.
Citation:
A. V. Malevskaya, N. A. Kalyuzhnyy, S. A. Mintairov, R. A. Salii, D. A. Malevskii, M. V. Nakhimovich, V. R. Larionov, P. V. Pokrovskii, M. Z. Shvarts, V. M. Andreev, “High efficiency (EQE = 37.5%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1218–1222
\Bibitem{MalKalMin21}
\by A.~V.~Malevskaya, N.~A.~Kalyuzhnyy, S.~A.~Mintairov, R.~A.~Salii, D.~A.~Malevskii, M.~V.~Nakhimovich, V.~R.~Larionov, P.~V.~Pokrovskii, M.~Z.~Shvarts, V.~M.~Andreev
\paper High efficiency (EQE = 37.5\%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 12
\pages 1218--1222
\mathnet{http://mi.mathnet.ru/phts4920}
\crossref{https://doi.org/10.21883/FTP.2021.12.51709.9711}
\elib{https://elibrary.ru/item.asp?id=46667394}
Linking options:
https://www.mathnet.ru/eng/phts4920
https://www.mathnet.ru/eng/phts/v55/i12/p1218
This publication is cited in the following 2 articles:
R. A. Salii, A. V. Malevskaya, D. A. Malevskii, S. A. Mintairov, A. M. Nadtochiy, N. A. Kalyuzhnyy, “Light-emitting AlGaAs/GaAs diodes based on ingaas strain-compensated quantum wells with minimized internal losses OF 940 nm radiation absorption”, Kristallografiâ, 69:4 (2024), 743
R. A. Salii, A. V. Malevskaya, D. A. Malevskii, S. A. Mintairov, A. M. Nadtochiy, N. A. Kalyuzhnyy, “Light-Emitting AlGaAs/GaAs Diodes Based on InGaAs Strain-Compensated Quantum Wells with Minimized Internal Losses Caused by 940-nm Radiation Absorption”, Crystallogr. Rep., 69:4 (2024), 620
Citation in format AMSBIB
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