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Publications in Math-Net.Ru |
Citations |
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2022 |
| 1. |
S. A. Blokhin, A. V. Babichev, L. Ya. Karachinsky, I. I. Novikov, A. A. Blokhin, M. A. Bobrov, A. G. Kuz'menkov, N. A. Maleev, V. V. Andryushkin, V. E. Bugrov, A. G. Gladyshev, N. V. Kryzhanovskaya, K. O. Voropaev, I. O. Zhumaeva, V. M. Ustinov, A. Yu. Egorov, “High-speed vertically emitting lasers in the spectral range of 1550 nm, implemented in the framework of wafer sintering method”, Kvantovaya Elektronika, 52:10 (2022), 878–884  [Bull. Lebedev Physics Institute, 50:suppl. 2 (2023), S140–S147] |
| 2. |
F. I. Zubov, Yu. M. Shernyakov, N. Yu. Gordeev, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maksimov, N. V. Kryzhanovskaya, È. I. Moiseev, A. M. Nadtochiy, A. E. Zhukov, “Ultrahigh modal gain in stripe injection lasers and microlasers based on InGaAs/GaAs quantum dots”, Kvantovaya Elektronika, 52:7 (2022), 593–596 |
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2021 |
| 3. |
N. V. Kryzhanovskaya, A. S. Dragunova, S. D. Komarov, A. M. Nadtochiy, A. G. Gladyshev, A. V. Babichev, A. V. Uvarov, V. V. Andryushkin, D. V. Denisov, E. S. Kolodeznyi, I. I. Novikov, L. Ya. Karachinsky, A. Yu. Egorov, “Optical properties of three-dimensional InGaP(As) islands formed by substitution of fifth-group elements”, Optics and Spectroscopy, 129:2 (2021), 218–222  ; Optics and Spectroscopy, 129:2 (2021), 256–260 |
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| 4. |
A. E. Zhukov, N. V. Kryzhanovskaya, È. I. Moiseev, A. S. Dragunova, A. M. Nadtochiy, M. V. Maksimov, N. Yu. Gordeev, “Increase in the efficiency of a tandem of semiconductor laser – optical amplifier based on self-organizing quantum dots”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1223–1228 |
| 5. |
A. E. Zhukov, N. V. Kryzhanovskaya, È. I. Moiseev, A. M. Nadtochiy, F. I. Zubov, M. V. Fetisova, M. V. Maksimov, N. Yu. Gordeev, “Saturation power of a semiconductor optical amplifier based on self-organized quantum dots”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 820–825 ; Semiconductors, 55 (2021), s67–s71 |
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| 6. |
A. E. Zhukov, N. V. Kryzhanovskaya, È. I. Moiseev, A. M. Nadtochiy, M. V. Maksimov, A. S. Dragunova, “Impact of substrate in calculating the electrical resistance of microdisk lasers”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 195–200 ; Semiconductors, 55:2 (2021), 250–255 |
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| 7. |
V. O. Gridchin, R. R. Reznik, K. P. Kotlyar, A. S. Dragunova, N. V. Kryzhanovskaya, A. Yu. Serov, S. A. Kukushkin, G. E. Cirlin, “MBE growth of InGaN nanowires on SiC/Si(111) and Si(111) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021), 32–35 |
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| 8. |
F. I. Zubov, M. V. Maksimov, N. V. Kryzhanovskaya, È. I. Moiseev, A. M. Nadtochiy, A. S. Dragunova, S. A. Blokhin, A. A. Vorob'ev, A. M. Mozharov, S. A. Mintairov, N. A. Kalyuzhnyy, A. E. Zhukov, “Increasing the optical power of InGaAs/GaAs microdisk lasers transferred to a silicon substrate by thermal compression”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021), 3–6 |
| 9. |
N. V. Kryzhanovskaya, I. A. Melnichenko, A. S. Bukatin, A. A. Kornev, N. A. Filatov, S. A. Scherbak, A. A. Lipovskii, A. S. Dragunova, M. M. Kulagina, A. I. Lihachev, M. V. Fetisova, I. V. Reduto, M. V. Maksimov, A. E. Zhukov, “An investigation of the sensitivity of a microdisk laser to a change in the refractive index of the environment”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:19 (2021), 30–33 |
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| 10. |
A. E. Zhukov, È. I. Moiseev, A. M. Nadtochiy, A. S. Dragunova, N. V. Kryzhanovskaya, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, F. I. Zubov, M. V. Maksimov, “Energy consumption at high-frequency modulation of an uncooled InGaAs/GaAs/AlGaAs microdisk laser”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021), 28–31 ; Tech. Phys. Lett., 47:9 (2021), 685–688 |
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2020 |
| 11. |
R. R. Reznik, V. O. Gridchin, K. P. Kotlyar, N. V. Kryzhanovskaya, S. V. Morozov, G. E. Cirlin, “Synthesis of morphologically developed ingan nanostructures on silicon: influence of the substrate temperature on the morphological and optical properties”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 884–887 ; Semiconductors, 54:9 (2020), 1075–1077 |
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| 12. |
A. V. Babichev, S. A. Kadinskaya, K. Yu. Shubina, A. A. Vasil'ev, A. A. Blokhin, È. I. Moiseev, S. A. Blokhin, I. S. Mukhin, I. A. Eliseyev, V. Yu. Davydov, P. N. Brunkov, N. V. Kryzhanovskaya, A. Yu. Egorov, “A study of the photoresponse in graphene produced by chemical vapor deposition”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 833–840 ; Semiconductors, 54:9 (2020), 991–998 |
| 13. |
A. E. Zhukov, N. V. Kryzhanovskaya, È. I. Moiseev, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maksimov, “Ultimate lasing temperature of microdisk lasers”, Fizika i Tekhnika Poluprovodnikov, 54:6 (2020), 570–574 ; Semiconductors, 54:6 (2020), 677–681 |
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| 14. |
V. G. Dubrovskii, R. R. Reznik, N. V. Kryzhanovskaya, I. V. Shtrom, E. D. Ubyivovk, I. P. Soshnikov, G. E. Cirlin, “MBE-grown In$_x$ Ga$_{1-x}$ As nanowires with 50% composition”, Fizika i Tekhnika Poluprovodnikov, 54:6 (2020), 542 ; Semiconductors, 54:6 (2020), 650–653 |
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| 15. |
È. I. Moiseev, M. V. Maksimov, N. V. Kryzhanovskaya, O. I. Simchuk, M. M. Kulagina, S. A. Kadinskaya, M. Guina, A. E. Zhukov, “Comparative analysis of injection microdisk lasers based on InGaAsN quantum wells and InAs/InGaAs quantum dots”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 212–216 ; Semiconductors, 54:2 (2020), 263–267 |
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| 16. |
A. E. Zhukov, È. I. Moiseev, A. M. Nadtochiy, A. S. Dragunova, N. V. Kryzhanovskaya, M. M. Kulagina, A. M. Mozharov, S. A. Kadinskaya, O. I. Simchuk, F. I. Zubov, M. V. Maksimov, “Lasing of injection microdisks with InAs/InGaAs/GaAs quantum dots transferred to silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:16 (2020), 3–6 ; Tech. Phys. Lett., 46:8 (2020), 783–786 |
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| 17. |
N. V. Kryzhanovskaya, È. I. Moiseev, A. M. Nadtochiy, A. A. Kharchenko, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maksimov, A. E. Zhukov, “A micro optocoupler based on a microdisk laser and a photodetector with an active region based on quantum well-dots”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:13 (2020), 7–10 ; Tech. Phys. Lett., 46:7 (2020), 629–632 |
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| 18. |
A. E. Zhukov, È. I. Moiseev, A. M. Nadtochiy, N. V. Kryzhanovskaya, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, F. I. Zubov, M. V. Maksimov, “The effect of self-heating on the modulation characteristics of a microdisk laser”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020), 3–7 ; Tech. Phys. Lett., 46:6 (2020), 515–519 |
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2019 |
| 19. |
A. E. Zhukov, È. I. Moiseev, N. V. Kryzhanovskaya, S. A. Blokhin, M. M. Kulagina, Yu. A. Guseva, S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Mozharov, F. I. Zubov, M. V. Maksimov, “Evaluation of the impact of surface recombination in microdisk lasers by means of high-frequency modulation”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1122–1127 ; Semiconductors, 53:8 (2019), 1099–1103 |
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| 20. |
L. S. Basalaeva, Yu. V. Nastaushev, F. N. Dultsev, N. V. Kryzhanovskaya, È. I. Moiseev, “Silicon nanopillar microarrays: formation and resonance reflection of light”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 216–220 ; Semiconductors, 53:2 (2019), 205–209 |
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| 21. |
M. V. Fetisova, A. A. Kornev, A. S. Bukatin, N. A. Filatov, I. E. Eliseev, N. V. Kryzhanovskaya, I. V. Reduto, È. I. Moiseev, M. V. Maksimov, A. E. Zhukov, “The use of microdisk lasers based on InAs/InGaAs quantum dots in biodetection”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:23 (2019), 10–13 ; Tech. Phys. Lett., 45:12 (2019), 1178–1181 |
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| 22. |
R. R. Reznik, K. P. Kotlyar, N. V. Kryzhanovskaya, S. V. Morozov, G. E. Cirlin, “Synthesis by molecular beam epitaxy and properties of InGaN nanostructures of branched morphology on a silicon substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 48–50 ; Tech. Phys. Lett., 45:11 (2019), 1111–1113 |
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| 23. |
F. I. Zubov, È. I. Moiseev, G. O. Kornyshov, N. V. Kryzhanovskaya, Yu. M. Shernyakov, A. S. Payusov, M. M. Kulagina, N. A. Kalyuzhnyy, S. A. Mintairov, M. V. Maksimov, A. E. Zhukov, “Specific features of the current–voltage characteristic of microdisk lasers based on InGaAs/GaAs quantum well-dots”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019), 37–39 ; Tech. Phys. Lett., 45:10 (2019), 994–996 |
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| 24. |
A. E. Zhukov, È. I. Moiseev, N. V. Kryzhanovskaya, F. I. Zubov, A. M. Mozharov, N. A. Kalyuzhnyy, S. A. Mintairov, M. M. Kulagina, S. A. Blokhin, M. V. Maksimov, “Energy consumption for high-frequency switching of a quantum-dot microdisk laser”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019), 49–51 ; Tech. Phys. Lett., 45:8 (2019), 847–849 |
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2018 |
| 25. |
L. S. Basalaeva, Yu. V. Nastaushev, F. N. Dultsev, N. V. Kryzhanovskaya, È. I. Moiseev, “Reflection spectra of microarrays of silicon nanopillars”, Optics and Spectroscopy, 124:5 (2018), 695–699 ; Optics and Spectroscopy, 124:5 (2018), 730–734 |
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| 26. |
L. V. Asryan, F. I. Zubov, Yu. S. Balezina (Polubavkina), È. I. Moiseev, M. E. Muretova, N. V. Kryzhanovskaya, M. V. Maksimov, A. E. Zhukov, “Violation of local electroneutrality in the quantum well of a semiconductor laser with asymmetric barrier layers”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1518–1526 ; Semiconductors, 52:12 (2018), 1621–1629 |
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| 27. |
G. E. Cirlin, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, K. P. Kotlyar, I. V. Ilkiv, I. P. Sotnikov, D. A. Kirilenko, N. V. Kryzhanovskaya, “Phosphorus-based nanowires grown by molecular-beam epitaxy on silicon”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1304–1307 ; Semiconductors, 52:11 (2018), 1416–1419 |
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| 28. |
R. R. Reznik, G. E. Cirlin, I. V. Shtrom, A. I. Khrebtov, I. P. Sotnikov, N. V. Kryzhanovskaya, È. I. Moiseev, A. E. Zhukov, “Coherent growth of InP/InAsP/InP nanowires on a Si (111) surface by molecular-beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:3 (2018), 55–61 ; Tech. Phys. Lett., 44:2 (2018), 112–114 |
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2017 |
| 29. |
F. I. Zubov, E. S. Semenova, I. V. Kul'kova, K. Yvind, N. V. Kryzhanovskaya, M. V. Maksimov, A. E. Zhukov, “On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of $\sim$1.5 $\mu$m on an InP substrate”, Fizika i Tekhnika Poluprovodnikov, 51:10 (2017), 1382–1386 ; Semiconductors, 51:10 (2017), 1332–1336 |
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| 30. |
A. V. Babichev, N. V. Kryzhanovskaya, È. I. Moiseev, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, S. A. Blokhin, M. A. Bobrov, Yu. M. Zadiranov, S. I. Troshkov, A. Yu. Egorov, “Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1176–1181 ; Semiconductors, 51:9 (2017), 1127–1132 |
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| 31. |
N. V. Kryzhanovskaya, Yu. S. Polubavkina, V. N. Nevedomskiy, E. V. Nikitina, A. Lazarenko, A. Yu. Egorov, M. V. Maksimov, È. I. Moiseev, A. E. Zhukov, “Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4$^\circ$ substrates”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 276–280 ; Semiconductors, 51:2 (2017), 267–271 |
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| 32. |
Yu. S. Polubavkina, F. I. Zubov, È. I. Moiseev, N. V. Kryzhanovskaya, M. V. Maksimov, E. S. Semenova, K. Yvind, L. V. Asryan, A. E. Zhukov, “Specific features of waveguide recombination in laser structures with asymmetric barrier layers”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 263–268 ; Semiconductors, 51:2 (2017), 254–259 |
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2016 |
| 33. |
F. I. Zubov, N. V. Kryzhanovskaya, È. I. Moiseev, Yu. S. Polubavkina, O. I. Simchuk, M. M. Kulagina, Yu. M. Zadiranov, S. I. Troshkov, A. A. Lipovskii, M. V. Maksimov, A. E. Zhukov, “Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1425–1428 ; Semiconductors, 50:10 (2016), 1408–1411 |
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| 34. |
L. V. Asryan, F. I. Zubov, N. V. Kryzhanovskaya, M. V. Maksimov, A. E. Zhukov, “Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1380–1386 ; Semiconductors, 50:10 (2016), 1362–1368 |
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| 35. |
A. E. Zhukov, G. E. Cirlin, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, M. A. Kaliteevskii, K. A. Ivanov, N. V. Kryzhanovskaya, M. V. Maksimov, Zh. I. Alferov, “Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 674–678 ; Semiconductors, 50:5 (2016), 662–666 |
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| 36. |
N. V. Kryzhanovskaya, M. V. Maksimov, S. A. Blokhin, M. A. Bobrov, M. M. Kulagina, S. I. Troshkov, Yu. M. Zadiranov, A. A. Lipovskii, È. I. Moiseev, Yu. V. Kudashova, D. A. Livshits, V. M. Ustinov, A. E. Zhukov, “Microdisk injection lasers for the 1.27-$\mu$m spectral range”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 393–397 ; Semiconductors, 50:3 (2016), 390–393 |
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| 37. |
S. A. Blokhin, N. V. Kryzhanovskaya, È. I. Moiseev, M. A. Bobrov, A. G. Kuz'menkov, A. A. Blokhin, A. P. Vasil'ev, I. O. Karpovskii, Yu. M. Zadiranov, S. I. Troshkov, V. N. Nevedomskiy, E. V. Nikitina, N. A. Maleev, V. M. Ustinov, “Laser generation at 1.3 $\mu$m in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:19 (2016), 70–79 ; Tech. Phys. Lett., 42:10 (2016), 1009–1012 |
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2014 |
| 38. |
N. V. Kryzhanovskaya, M. V. Maksimov, A. E. Zhukov, “Whispering-gallery mode microcavity quantum-dot lasers”, Kvantovaya Elektronika, 44:3 (2014), 189–200 [Quantum Electron., 44:3 (2014), 189–200   ] |
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