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This article is cited in 2 scientific papers (total in 2 papers)
Semiconductor physics
Specific features of waveguide recombination in laser structures with asymmetric barrier layers
Yu. S. Polubavkinaa, F. I. Zubovab, È. I. Moiseeva, N. V. Kryzhanovskayaab, M. V. Maksimovab, E. S. Semenovac, K. Yvindc, L. V. Asryand, A. E. Zhukovab a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Peter the Great St. Petersburg Polytechnic University
c DTU Fotonik, Technical University of Denmark, Denmark
d Virginia Polytechnic Institute and State University Blacksburg, Virginia, USA
Abstract:
The spatial distribution of the intensity of the emission caused by recombination appearing at a high injection level (up to 30 kA/cm$^2$) in the waveguide layer of a GaAs/AlGaAs laser structure with GaInP and AlGaInAs asymmetric barrier layers is studied by means of near-field scanning optical microscopy. It is found that the waveguide luminescence in such a laser, which is on the whole less intense as compared to that observed in a similar laser without asymmetric barriers, is non-uniformly distributed in the waveguide, so that the distribution maximum is shifted closer to the $p$-type cladding layer. This can be attributed to the ability of the GaInP barrier adjoining the quantum well on the side of the $n$-type cladding layer to suppress the hole transport.
Received: 28.06.2016 Accepted: 03.07.2016
Citation:
Yu. S. Polubavkina, F. I. Zubov, È. I. Moiseev, N. V. Kryzhanovskaya, M. V. Maksimov, E. S. Semenova, K. Yvind, L. V. Asryan, A. E. Zhukov, “Specific features of waveguide recombination in laser structures with asymmetric barrier layers”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 263–268; Semiconductors, 51:2 (2017), 254–259
Linking options:
https://www.mathnet.ru/eng/phts6244 https://www.mathnet.ru/eng/phts/v51/i2/p263
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