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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 10, Pages 1382–1386
DOI: https://doi.org/10.21883/FTP.2017.10.45017.8590 (Mi phts6022) 		 
This article is cited in 4 scientific papers (total in 4 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of $\sim$1.5 $\mu$m on an InP substrate

F. I. Zubova, E. S. Semenovab, I. V. Kul'kovab, K. Yvindb, N. V. Kryzhanovskayaa, M. V. Maksimova, A. E. Zhukova

a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b DTU Fotonics Technical University of Denmark, Kgs. Lyngby, DK-2800 Denmark
Full-text PDF (334 kB) Citations (4)
DOI: https://doi.org/10.21883/FTP.2017.10.45017.8590
Abstract: We report on a study of lasers with an emission wavelength of about 1.5 $\mu$m and high temperature stability, synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer are used as the active region of the laser. A quaternary InGaAsP solid solution with a band-gap width of 1.15 eV serves as the waveguide/matrix layer. A high characteristic temperature of the threshold current, $T_0$ = 205 K, is reached in the temperature range 20–50$^\circ$C in ridge-waveguide laser diodes. A correlation between the values of $T_0$ and the band-gap width of the waveguide layers is found.
Received: 27.03.2017
Accepted: 05.04.2017
English version:
Semiconductors, 2017, Volume 51, Issue 10, Pages 1332–1336
DOI: https://doi.org/10.1134/S1063782617100207
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: F. I. Zubov, E. S. Semenova, I. V. Kul'kova, K. Yvind, N. V. Kryzhanovskaya, M. V. Maksimov, A. E. Zhukov, “On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of $\sim$1.5 $\mu$m on an InP substrate”, Fizika i Tekhnika Poluprovodnikov, 51:10 (2017), 1382–1386; Semiconductors, 51:10 (2017), 1332–1336
Citation in format AMSBIB
\Bibitem{ZubSemKul17}
\by F.~I.~Zubov, E.~S.~Semenova, I.~V.~Kul'kova, K.~Yvind, N.~V.~Kryzhanovskaya, M.~V.~Maksimov, A.~E.~Zhukov
\paper On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of $\sim$1.5 $\mu$m on an InP substrate
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 10
\pages 1382--1386
\mathnet{http://mi.mathnet.ru/phts6022}
\crossref{https://doi.org/10.21883/FTP.2017.10.45017.8590}
\elib{https://elibrary.ru/item.asp?id=30291328}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 10
\pages 1332--1336
\crossref{https://doi.org/10.1134/S1063782617100207}
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  • https://www.mathnet.ru/eng/phts/v51/i10/p1382
    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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