Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 10, Pages 1380–1386 (Mi phts6343)  

This article is cited in 11 scientific papers (total in 11 papers)

Semiconductor physics

Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling

L. V. Asryana, F. I. Zubovbc, N. V. Kryzhanovskayabc, M. V. Maksimovcb, A. E. Zhukovbc

a Virginia Polytechnic Institute and State University, Blacksburg, Virginia, USA
b Peter the Great St. Petersburg Polytechnic University
c Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
Abstract: The power characteristics of quantum-well lasers with asymmetric barrier layers, which represent a novel type of injection laser, are calculated on the basis of an extended model taking into account asymmetry in the filling of electron and hole states. The electron–hole asymmetry is shown to have no significant effect on the characteristics of these lasers. Even in the presence of intermediate layers (located between the quantum well and each of the two asymmetric barrier layers), where parasitic electron–hole recombination does occur, the internal differential quantum efficiency of such a laser exhibits only a weak dependence on the pump current and remains close to unity; therefore, the light–current characteristic remains linear up to high pumping levels.
Received: 29.02.2016
Accepted: 04.04.2016
English version:
Semiconductors, 2016, Volume 50, Issue 10, Pages 1362–1368
DOI: https://doi.org/10.1134/S1063782616100055
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: L. V. Asryan, F. I. Zubov, N. V. Kryzhanovskaya, M. V. Maksimov, A. E. Zhukov, “Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1380–1386; Semiconductors, 50:10 (2016), 1362–1368
Citation in format AMSBIB
\Bibitem{AsrZubKry16}
\by L.~V.~Asryan, F.~I.~Zubov, N.~V.~Kryzhanovskaya, M.~V.~Maksimov, A.~E.~Zhukov
\paper Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 10
\pages 1380--1386
\mathnet{http://mi.mathnet.ru/phts6343}
\elib{https://elibrary.ru/item.asp?id=27369017}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 10
\pages 1362--1368
\crossref{https://doi.org/10.1134/S1063782616100055}
Linking options:
  • https://www.mathnet.ru/eng/phts6343
  • https://www.mathnet.ru/eng/phts/v50/i10/p1380
  • This publication is cited in the following 11 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:66
    Full-text PDF :13
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024