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This article is cited in 1 scientific paper (total in 1 paper)
Semiconductor structures, low-dimensional systems, quantum phenomena
Silicon nanopillar microarrays: formation and resonance reflection of light
L. S. Basalaevaa, Yu. V. Nastausheva, F. N. Dultsevab, N. V. Kryzhanovskayac, È. I. Moiseevc a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
Abstract:
The results of investigating the spectral characteristics of reflection from silicon nanopillar (Si NP) microarrays in the wavelength region from 400 to 1100 nm are presented. The Si nanopillars are formed by electron lithography on a negative resist with subsequent reactive ion etching. The Si nanopillars are etched through a resist mask and SiO$_2$ 100 nm thick. In the spectra of reflection from nanopillar microarrays, minima are observed, the position of which depends strongly on the Si nanopillar diameter.
Received: 10.07.2018 Revised: 21.08.2018
Citation:
L. S. Basalaeva, Yu. V. Nastaushev, F. N. Dultsev, N. V. Kryzhanovskaya, È. I. Moiseev, “Silicon nanopillar microarrays: formation and resonance reflection of light”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 216–220; Semiconductors, 53:2 (2019), 205–209
Linking options:
https://www.mathnet.ru/eng/phts5589 https://www.mathnet.ru/eng/phts/v53/i2/p216
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