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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 16, Pages 3–6
DOI: https://doi.org/10.21883/PJTF.2020.16.49844.18354 (Mi pjtf5013) 		 
This article is cited in 4 scientific papers (total in 4 papers)

Lasing of injection microdisks with InAs/InGaAs/GaAs quantum dots transferred to silicon

A. E. Zhukova, È. I. Moiseeva, A. M. Nadtochiya, A. S. Dragunovaa, N. V. Kryzhanovskayaa, M. M. Kulaginab, A. M. Mozharovc, S. A. Kadinskayac, O. I. Simchukc, F. I. Zubovc, M. V. Maksimovc

a National Research University "Higher School of Economics", St. Petersburg Branch
b Ioffe Institute, St. Petersburg
c Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
Full-text PDF (649 kB) Citations (4)
DOI: https://doi.org/10.21883/PJTF.2020.16.49844.18354
Abstract: AlGaAs/GaAs microdisk lasers with InAs/InGaAs quantum dots region were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact put over a residual $n^+$-GaAs substrate, whereas their individual addressing is achieved by placing them $p$-contact down to separate contact pads. No effect of non-native substrate on electrical resistance, threshold current, thermal resistance, and spectral characteristics was revealed. Microdisks lase in continuous-wave mode without external cooling with the threshold current density of 0.7 kA/cm$^2$. Lasing wavelength remains stable ($<$ 0.1 nm/mA) against injection current increment.
Keywords: semiconductor laser, microdisk laser, nanostructures, hybrid integration.
Funding agency Grant number
Russian Science Foundation 19-72-30010
National Research University Higher School of Economics
This study was supported by the Russian Science Foundation, agreement no. 19-72-30010. The optical investigations were carried under the Program of Fundamental Research for the National Research University “Higher School of Economics” in 2020.
Received: 24.04.2020
Revised: 06.05.2020
Accepted: 06.05.2020
English version:
Technical Physics Letters, 2020, Volume 46, Issue 8, Pages 783–786
DOI: https://doi.org/10.1134/S1063785020080295
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. E. Zhukov, È. I. Moiseev, A. M. Nadtochiy, A. S. Dragunova, N. V. Kryzhanovskaya, M. M. Kulagina, A. M. Mozharov, S. A. Kadinskaya, O. I. Simchuk, F. I. Zubov, M. V. Maksimov, “Lasing of injection microdisks with InAs/InGaAs/GaAs quantum dots transferred to silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:16 (2020), 3–6; Tech. Phys. Lett., 46:8 (2020), 783–786
Citation in format AMSBIB
\Bibitem{ZhuMoiNad20}
\by A.~E.~Zhukov, \`E.~I.~Moiseev, A.~M.~Nadtochiy, A.~S.~Dragunova, N.~V.~Kryzhanovskaya, M.~M.~Kulagina, A.~M.~Mozharov, S.~A.~Kadinskaya, O.~I.~Simchuk, F.~I.~Zubov, M.~V.~Maksimov
\paper Lasing of injection microdisks with InAs/InGaAs/GaAs quantum dots transferred to silicon
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 46
\issue 16
\pages 3--6
\mathnet{http://mi.mathnet.ru/pjtf5013}
\crossref{https://doi.org/10.21883/PJTF.2020.16.49844.18354}
\elib{https://elibrary.ru/item.asp?id=44041075}
\transl
\jour Tech. Phys. Lett.
\yr 2020
\vol 46
\issue 8
\pages 783--786
\crossref{https://doi.org/10.1134/S1063785020080295}
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