|
Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 3, Pages 393–397
(Mi phts6522)
|
|
|
|
This article is cited in 13 scientific papers (total in 13 papers)
Semiconductor physics
Microdisk injection lasers for the 1.27-$\mu$m spectral range
N. V. Kryzhanovskayaa, M. V. Maksimovab, S. A. Blokhinb, M. A. Bobrovbc, M. M. Kulaginab, S. I. Troshkovb, Yu. M. Zadiranovb, A. A. Lipovskiica, È. I. Moiseeva, Yu. V. Kudashovaa, D. A. Livshitsd, V. M. Ustinovb, A. E. Zhukovace a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Ioffe Institute, St. Petersburg
c Peter the Great St. Petersburg Polytechnic University
d Innolume GmbH, Dortmund, Germany
e Saint-Petersburg Scientific Center, Russian Academy of Sciences
Abstract:
Microdisk injection lasers on GaAs substrates, with a minimum diameter of 15 $\mu$m and an active region based on InAs/InGaAs quantum dots, are fabricated. The lasers operate in the continuous-wave mode at room temperature without external cooling. The lasing wavelength is around 1.27 $\mu$m at a minimum threshold current of 1.6 mA. The specific thermal resistance is estimated to be 5 $\times$ 10$^{-3\circ}$С cm$^{2}$/W.
Keywords:
GaAs, Quantum Well, Pump Current, Whisper Gallery Mode, Threshold Current Density.
Received: 30.06.2015 Accepted: 08.07.2015
Citation:
N. V. Kryzhanovskaya, M. V. Maksimov, S. A. Blokhin, M. A. Bobrov, M. M. Kulagina, S. I. Troshkov, Yu. M. Zadiranov, A. A. Lipovskii, È. I. Moiseev, Yu. V. Kudashova, D. A. Livshits, V. M. Ustinov, A. E. Zhukov, “Microdisk injection lasers for the 1.27-$\mu$m spectral range”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 393–397; Semiconductors, 50:3 (2016), 390–393
Linking options:
https://www.mathnet.ru/eng/phts6522 https://www.mathnet.ru/eng/phts/v50/i3/p393
|
Statistics & downloads: |
Abstract page: | 62 | Full-text PDF : | 18 |
|