Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 2, Pages 212–216
DOI: https://doi.org/10.21883/FTP.2020.02.48907.9290 (Mi phts5289) 		 
This article is cited in 5 scientific papers (total in 5 papers)

Semiconductor physics

Comparative analysis of injection microdisk lasers based on InGaAsN quantum wells and InAs/InGaAs quantum dots

È. I. Moiseeva, M. V. Maksimova, N. V. Kryzhanovskayaab, O. I. Simchuka, M. M. Kulaginac, S. A. Kadinskayaa, M. Guinad, A. E. Zhukovab

a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Peter the Great St. Petersburg Polytechnic University
c Ioffe Institute, St. Petersburg
d Tampere University of Technology, Tampere, Finland
Full-text PDF (514 kB) Citations (5)
DOI: https://doi.org/10.21883/FTP.2020.02.48907.9290
Abstract: The results are presented on a comparative analysis of the spectral and threshold characteristics of diode microdisk lasers operating at room temperature in a spectral range of 1.2xx $\mu$m with different active regions: InGaAsN/GaAs quantum wells or InAs/InGaAs/GaAs quantum dots. It was found that microlasers of a comparable size with quantum wells have higher lasing threshold compared to microlasers with quantum dots. At the same time, the latter are characterized by a noticeably smaller fraction of the radiated power with the laser modes. They are also characterized by a jump to excited-state optical transition lasing. The InGaAsN-based microdisk lasers lack these disadvantages.
Keywords: microlaser, quantum wells, quantum dots, nitrogen-containing semiconductors.
Funding agency Grant number
Russian Foundation for Basic Research 16-29-03127 офи_м
Ministry of Education and Science of the Russian Federation 3.9787.2017/8.9
This study was supported by the Russian Foundation for Basic Research, project no. 16-29-03127 ofi_m and by the Ministry of Education and Science of the Russian Federation, project 3.9787.2017/8.9.
Received: 20.10.2019
Revised: 29.10.2019
Accepted: 29.10.2019
English version:
Semiconductors, 2020, Volume 54, Issue 2, Pages 263–267
DOI: https://doi.org/10.1134/S1063782620020177
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: È. I. Moiseev, M. V. Maksimov, N. V. Kryzhanovskaya, O. I. Simchuk, M. M. Kulagina, S. A. Kadinskaya, M. Guina, A. E. Zhukov, “Comparative analysis of injection microdisk lasers based on InGaAsN quantum wells and InAs/InGaAs quantum dots”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 212–216; Semiconductors, 54:2 (2020), 263–267
Citation in format AMSBIB
\Bibitem{MoiMakKry20}
\by \`E.~I.~Moiseev, M.~V.~Maksimov, N.~V.~Kryzhanovskaya, O.~I.~Simchuk, M.~M.~Kulagina, S.~A.~Kadinskaya, M.~Guina, A.~E.~Zhukov
\paper Comparative analysis of injection microdisk lasers based on InGaAsN quantum wells and InAs/InGaAs quantum dots
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 2
\pages 212--216
\mathnet{http://mi.mathnet.ru/phts5289}
\crossref{https://doi.org/10.21883/FTP.2020.02.48907.9290}
\elib{https://elibrary.ru/item.asp?id=42571101}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 2
\pages 263--267
\crossref{https://doi.org/10.1134/S1063782620020177}
Linking options:
  • https://www.mathnet.ru/eng/phts5289
  • https://www.mathnet.ru/eng/phts/v54/i2/p212
    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:58
    Full-text PDF :15
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024