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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 2, Pages 276–280
DOI: https://doi.org/10.21883/FTP.2017.02.44118.8375 (Mi phts6246) 		 
This article is cited in 4 scientific papers (total in 4 papers)

Manufacturing, processing, testing of materials and structures

Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4$^\circ$ substrates

N. V. Kryzhanovskayaabc, Yu. S. Polubavkinaa, V. N. Nevedomskiyc, E. V. Nikitinaa, A. Lazarenkoa, A. Yu. Egorovd, M. V. Maksimovabc, È. I. Moiseeva, A. E. Zhukovab

a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Peter the Great St. Petersburg Polytechnic University
c Ioffe Institute, St. Petersburg
d St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Full-text PDF (1010 kB) Citations (4)
DOI: https://doi.org/10.21883/FTP.2017.02.44118.8375
Abstract: The structural and optical properties of GaP and GaPN layers synthesized by molecular-beam epitaxy on Si(100) substrates misoriented by 4$^\circ$ are studied. The possibility of producing GaP buffer layers that exhibit a high degree of heterointerface planarity and an outcropping dislocation density of no higher than $\sim$2 $\times$ 10$^{8}$ cm$^{-2}$ is shown. Emission from the Si/GaP/GaPN structure in the spectral range of 630–640 nm at room temperature is observed. Annealing during growth of the Si/GaP/GaPN structure makes it possible to enhance the room-temperature photoluminescence intensity by a factor of 2.6, with no shift of the maximum of the emission line.
Received: 26.07.2016
Accepted: 01.08.2016
English version:
Semiconductors, 2017, Volume 51, Issue 2, Pages 267–271
DOI: https://doi.org/10.1134/S1063782617020087
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. V. Kryzhanovskaya, Yu. S. Polubavkina, V. N. Nevedomskiy, E. V. Nikitina, A. Lazarenko, A. Yu. Egorov, M. V. Maksimov, È. I. Moiseev, A. E. Zhukov, “Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4$^\circ$ substrates”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 276–280; Semiconductors, 51:2 (2017), 267–271
Citation in format AMSBIB
\Bibitem{KryPolNev17}
\by N.~V.~Kryzhanovskaya, Yu.~S.~Polubavkina, V.~N.~Nevedomskiy, E.~V.~Nikitina, A.~Lazarenko, A.~Yu.~Egorov, M.~V.~Maksimov, \`E.~I.~Moiseev, A.~E.~Zhukov
\paper Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4$^\circ$ substrates
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 2
\pages 276--280
\mathnet{http://mi.mathnet.ru/phts6246}
\crossref{https://doi.org/10.21883/FTP.2017.02.44118.8375}
\elib{https://elibrary.ru/item.asp?id=29006011}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 2
\pages 267--271
\crossref{https://doi.org/10.1134/S1063782617020087}
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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