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Publications in Math-Net.Ru |
Citations |
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2022 |
| 1. |
F. I. Zubov, Yu. M. Shernyakov, N. Yu. Gordeev, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maksimov, N. V. Kryzhanovskaya, È. I. Moiseev, A. M. Nadtochiy, A. E. Zhukov, “Ultrahigh modal gain in stripe injection lasers and microlasers based on InGaAs/GaAs quantum dots”, Kvantovaya Elektronika, 52:7 (2022), 593–596  |
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2021 |
| 2. |
A. E. Zhukov, N. V. Kryzhanovskaya, È. I. Moiseev, A. S. Dragunova, A. M. Nadtochiy, M. V. Maksimov, N. Yu. Gordeev, “Increase in the efficiency of a tandem of semiconductor laser – optical amplifier based on self-organizing quantum dots”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1223–1228  |
| 3. |
A. E. Zhukov, N. V. Kryzhanovskaya, È. I. Moiseev, A. M. Nadtochiy, F. I. Zubov, M. V. Fetisova, M. V. Maksimov, N. Yu. Gordeev, “Saturation power of a semiconductor optical amplifier based on self-organized quantum dots”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 820–825 ; Semiconductors, 55 (2021), s67–s71 |
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| 4. |
Yu. M. Shernyakov, N. Yu. Gordeev, A. S. Payusov, A. A. Serin, G. O. Kornyshov, A. M. Nadtochiy, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maksimov, A. E. Zhukov, “Effect of the active region and waveguide design on the performance of edge-emitting lasers based on InGaAs/GaAs quantum well-dots”, Fizika i Tekhnika Poluprovodnikov, 55:3 (2021), 256–263 ; Semiconductors, 55:3 (2021), 333–340 |
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| 5. |
A. E. Zhukov, N. V. Kryzhanovskaya, È. I. Moiseev, A. M. Nadtochiy, M. V. Maksimov, A. S. Dragunova, “Impact of substrate in calculating the electrical resistance of microdisk lasers”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 195–200 ; Semiconductors, 55:2 (2021), 250–255 |
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| 6. |
A. S. Payusov, M. I. Mitrofanov, G. O. Kornyshov, A. A. Serin, G. V. Voznyuk, M. M. Kulagina, V. P. Evtikhiev, N. Yu. Gordeev, M. V. Maksimov, S. Breuer, “Focused ion beam milling of ridge waveguides of edge-emitting semiconductor lasers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021), 51–54 |
| 7. |
F. I. Zubov, M. V. Maksimov, N. V. Kryzhanovskaya, È. I. Moiseev, A. M. Nadtochiy, A. S. Dragunova, S. A. Blokhin, A. A. Vorob'ev, A. M. Mozharov, S. A. Mintairov, N. A. Kalyuzhnyy, A. E. Zhukov, “Increasing the optical power of InGaAs/GaAs microdisk lasers transferred to a silicon substrate by thermal compression”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021), 3–6 |
| 8. |
N. V. Kryzhanovskaya, I. A. Melnichenko, A. S. Bukatin, A. A. Kornev, N. A. Filatov, S. A. Scherbak, A. A. Lipovskii, A. S. Dragunova, M. M. Kulagina, A. I. Lihachev, M. V. Fetisova, I. V. Reduto, M. V. Maksimov, A. E. Zhukov, “An investigation of the sensitivity of a microdisk laser to a change in the refractive index of the environment”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:19 (2021), 30–33 |
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| 9. |
A. E. Zhukov, È. I. Moiseev, A. M. Nadtochiy, A. S. Dragunova, N. V. Kryzhanovskaya, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, F. I. Zubov, M. V. Maksimov, “Energy consumption at high-frequency modulation of an uncooled InGaAs/GaAs/AlGaAs microdisk laser”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021), 28–31 ; Tech. Phys. Lett., 47:9 (2021), 685–688 |
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2020 |
| 10. |
D. A. Rybalko, A. M. Nadtochiy, M. V. Maksimov, A. E. Zhukov, “Spectroscopy of photoluminescence excitation of InAs/InGaAs/GaAs quantum dot array in 20–300 K temperature range”, Optics and Spectroscopy, 128:1 (2020), 110–117 ; Optics and Spectroscopy, 158:1 (2020), 106–113 |
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| 11. |
A. E. Zhukov, N. V. Kryzhanovskaya, È. I. Moiseev, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maksimov, “Ultimate lasing temperature of microdisk lasers”, Fizika i Tekhnika Poluprovodnikov, 54:6 (2020), 570–574 ; Semiconductors, 54:6 (2020), 677–681 |
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| 12. |
F. I. Zubov, M. E. Muretova, A. S. Payusov, M. V. Maksimov, A. E. Zhukov, L. V. Asryan, “Parasitic recombination in a laser with asymmetric barrier layers”, Fizika i Tekhnika Poluprovodnikov, 54:3 (2020), 296–303 ; Semiconductors, 54:3 (2020), 366–373 |
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| 13. |
È. I. Moiseev, M. V. Maksimov, N. V. Kryzhanovskaya, O. I. Simchuk, M. M. Kulagina, S. A. Kadinskaya, M. Guina, A. E. Zhukov, “Comparative analysis of injection microdisk lasers based on InGaAsN quantum wells and InAs/InGaAs quantum dots”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 212–216 ; Semiconductors, 54:2 (2020), 263–267 |
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| 14. |
S. A. Mintairov, I. M. Gadzhiev, N. A. Kalyuzhnyy, M. V. Maksimov, A. M. Nadtochiy, M. V. Nakhimovich, R. A. Salii, M. Z. Shvarts, A. E. Zhukov, “High-speed photodetectors for the 950–1100 nm optical range based on In$_{0.4}$Ga$_{0.6}$As/GaAs quantum well-dot nanostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020), 11–14 ; Tech. Phys. Lett., 46:12 (2020), 1219–1222 |
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| 15. |
A. E. Zhukov, È. I. Moiseev, A. M. Nadtochiy, A. S. Dragunova, N. V. Kryzhanovskaya, M. M. Kulagina, A. M. Mozharov, S. A. Kadinskaya, O. I. Simchuk, F. I. Zubov, M. V. Maksimov, “Lasing of injection microdisks with InAs/InGaAs/GaAs quantum dots transferred to silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:16 (2020), 3–6 ; Tech. Phys. Lett., 46:8 (2020), 783–786 |
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| 16. |
N. V. Kryzhanovskaya, È. I. Moiseev, A. M. Nadtochiy, A. A. Kharchenko, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maksimov, A. E. Zhukov, “A micro optocoupler based on a microdisk laser and a photodetector with an active region based on quantum well-dots”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:13 (2020), 7–10 ; Tech. Phys. Lett., 46:7 (2020), 629–632 |
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| 17. |
A. E. Zhukov, È. I. Moiseev, A. M. Nadtochiy, N. V. Kryzhanovskaya, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, F. I. Zubov, M. V. Maksimov, “The effect of self-heating on the modulation characteristics of a microdisk laser”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020), 3–7 ; Tech. Phys. Lett., 46:6 (2020), 515–519 |
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| 18. |
S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maksimov, A. M. Nadtochiy, A. A. Kharchenko, M. Z. Shvarts, A. E. Zhukov, “Experimental and theoretical examination of the photosensitivity spectra of structures with In$_{0.4}$Ga$_{0.6}$As quantum well-dots of the optical range (900–1050 nm)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020), 3–6 ; Tech. Phys. Lett., 46:3 (2020), 203–206 |
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2019 |
| 19. |
A. M. Nadtochiy, Yu. M. Shernyakov, M. M. Kulagina, A. S. Payusov, N. Yu. Gordeev, M. V. Maksimov, A. E. Zhukov, T. Denneulin, N. Cherkashin, V. A. Shchukin, N. N. Ledentsov, “InGaAlP/GaAs injection lasers of orangeoptical range ($\sim$600nm)”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1708–1713 ; Semiconductors, 53:12 (2019), 1699–1704 |
| 20. |
A. M. Nadtochiy, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maksimov, D. A. Sannikov, T. F. Yagafarov, A. E. Zhukov, “Time-resolved photoluminescence of InGaAs nanostructures different in quantum dimensionality”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1520–1526 ; Semiconductors, 53:11 (2019), 1489–1495 |
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| 21. |
N. Yu. Gordeev, A. S. Payusov, M. V. Maksimov, “Semiconductor laser quasi-array with phase-locked single-mode emitting channels”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1444–1447 ; Semiconductors, 53:10 (2019), 1405–1408 |
| 22. |
A. E. Zhukov, È. I. Moiseev, N. V. Kryzhanovskaya, S. A. Blokhin, M. M. Kulagina, Yu. A. Guseva, S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Mozharov, F. I. Zubov, M. V. Maksimov, “Evaluation of the impact of surface recombination in microdisk lasers by means of high-frequency modulation”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1122–1127 ; Semiconductors, 53:8 (2019), 1099–1103 |
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| 23. |
N. Yu. Gordeev, A. S. Payusov, I. S. Mukhin, A. A. Serin, M. M. Kulagina, Yu. A. Guseva, Yu. M. Shernyakov, Yu. M. Zadiranov, M. V. Maksimov, “Lateral mode discrimination in edge-emitting lasers with spatially modulated facet reflectance”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 211–215 ; Semiconductors, 53 (2019), 200–204 |
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| 24. |
M. V. Fetisova, A. A. Kornev, A. S. Bukatin, N. A. Filatov, I. E. Eliseev, N. V. Kryzhanovskaya, I. V. Reduto, È. I. Moiseev, M. V. Maksimov, A. E. Zhukov, “The use of microdisk lasers based on InAs/InGaAs quantum dots in biodetection”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:23 (2019), 10–13 ; Tech. Phys. Lett., 45:12 (2019), 1178–1181 |
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| 25. |
F. I. Zubov, È. I. Moiseev, G. O. Kornyshov, N. V. Kryzhanovskaya, Yu. M. Shernyakov, A. S. Payusov, M. M. Kulagina, N. A. Kalyuzhnyy, S. A. Mintairov, M. V. Maksimov, A. E. Zhukov, “Specific features of the current–voltage characteristic of microdisk lasers based on InGaAs/GaAs quantum well-dots”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019), 37–39 ; Tech. Phys. Lett., 45:10 (2019), 994–996 |
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| 26. |
A. E. Zhukov, È. I. Moiseev, N. V. Kryzhanovskaya, F. I. Zubov, A. M. Mozharov, N. A. Kalyuzhnyy, S. A. Mintairov, M. M. Kulagina, S. A. Blokhin, M. V. Maksimov, “Energy consumption for high-frequency switching of a quantum-dot microdisk laser”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019), 49–51 ; Tech. Phys. Lett., 45:8 (2019), 847–849 |
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| 27. |
M. V. Maksimov, Yu. M. Shernyakov, F. I. Zubov, I. I. Novikov, A. G. Gladyshev, L. Ya. Karachinsky, D. V. Denisov, S. S. Rochas, E. S. Kolodeznyi, A. Yu. Egorov, A. E. Zhukov, “Temperature dependence of characteristics of diode lasers with narrow quantum wells of the 1.55 $\mu$m spectral range based on phosphorous-free heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019), 20–23 ; Tech. Phys. Lett., 45:6 (2019), 549–552 |
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| 28. |
A. M. Nadtochiy, S. A. Mintairov, N. A. Kalyuzhnyy, Yu. M. Shernyakov, G. O. Kornyshov, A. A. Serin, A. S. Payusov, V. N. Nevedomskiy, N. Yu. Gordeev, M. V. Maksimov, A. E. Zhukov, “Lasers based on quantum well-dots emitting in the 980- and 1080-nm optical ranges”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019), 42–45 ; Tech. Phys. Lett., 45:2 (2019), 163–166 |
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2018 |
| 29. |
L. V. Asryan, F. I. Zubov, Yu. S. Balezina (Polubavkina), È. I. Moiseev, M. E. Muretova, N. V. Kryzhanovskaya, M. V. Maksimov, A. E. Zhukov, “Violation of local electroneutrality in the quantum well of a semiconductor laser with asymmetric barrier layers”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1518–1526 ; Semiconductors, 52:12 (2018), 1621–1629 |
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| 30. |
A. E. Zhukov, N. Yu. Gordeev, Yu. M. Shernyakov, A. S. Payusov, A. A. Serin, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maksimov, “Reduction of internal loss and thermal resistance in diode lasers with coupled waveguides”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1351–1356 ; Semiconductors, 52:11 (2018), 1462–1467 |
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| 31. |
M. V. Maksimov, A. M. Nadtochiy, Yu. M. Shernyakov, A. S. Payusov, A. P. Vasil'ev, V. M. Ustinov, A. A. Serin, N. Yu. Gordeev, A. E. Zhukov, “Effect of epitaxial-structure design and growth parameters on the characteristics of metamorphic lasers of the 1.46-$\mu$m optical range based on quantum dots grown on GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1191–1196 ; Semiconductors, 52:10 (2018), 1311–1316 |
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| 32. |
S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maksimov, V. N. Nevedomskiy, L. A. Sokura, S. S. Ruvimov, M. Z. Shvarts, A. E. Zhukov, “Multilayer quantum well–dot InGaAs heterostructures in GaAs-based photovoltaic converters”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1131–1136 ; Semiconductors, 52:10 (2018), 1249–1254 |
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| 33. |
F. I. Zubov, M. V. Maksimov, N. Yu. Gordeev, Yu. S. Polubavkina, A. E. Zhukov, “Suppression of recombination in the waveguide of a laser heterostructure by means of double asymmetric barriers”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 260–265 ; Semiconductors, 52:2 (2018), 248–253 |
| 34. |
A. M. Nadtochiy, S. A. Mintairov, N. A. Kalyuzhnyy, S. S. Ruvimov, V. N. Nevedomskiy, M. V. Maksimov, A. E. Zhukov, “Bimodality in arrays of In$_{0.4}$Ga$_{0.6}$As hybrid quantum-confined heterostructures grown on GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 57–62 ; Semiconductors, 52:1 (2018), 55–58 |
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| 35. |
A. E. Zhukov, N. Yu. Gordeev, Yu. M. Shernyakov, A. S. Payusov, A. A. Serin, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maksimov, “Power characteristics and temperature dependence of the angular beam divergence of lasers with a near-surface active region”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:15 (2018), 46–51 ; Tech. Phys. Lett., 44:8 (2018), 675–677 |
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2017 |
| 36. |
F. I. Zubov, E. S. Semenova, I. V. Kul'kova, K. Yvind, N. V. Kryzhanovskaya, M. V. Maksimov, A. E. Zhukov, “On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of $\sim$1.5 $\mu$m on an InP substrate”, Fizika i Tekhnika Poluprovodnikov, 51:10 (2017), 1382–1386 ; Semiconductors, 51:10 (2017), 1332–1336 |
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| 37. |
S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maksimov, A. M. Nadtochiy, V. N. Nevedomskiy, A. E. Zhukov, “InAs QDs in a metamorphic In$_{0.25}$Ga$_{0.75}$As matrix, grown by MOCVD”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 704–710 ; Semiconductors, 51:5 (2017), 672–678 |
| 38. |
S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maksimov, S. S. Ruvimov, A. E. Zhukov, “Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 372–377 ; Semiconductors, 51:3 (2017), 357–362 |
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| 39. |
N. V. Kryzhanovskaya, Yu. S. Polubavkina, V. N. Nevedomskiy, E. V. Nikitina, A. Lazarenko, A. Yu. Egorov, M. V. Maksimov, È. I. Moiseev, A. E. Zhukov, “Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4$^\circ$ substrates”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 276–280 ; Semiconductors, 51:2 (2017), 267–271 |
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| 40. |
Yu. S. Polubavkina, F. I. Zubov, È. I. Moiseev, N. V. Kryzhanovskaya, M. V. Maksimov, E. S. Semenova, K. Yvind, L. V. Asryan, A. E. Zhukov, “Specific features of waveguide recombination in laser structures with asymmetric barrier layers”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 263–268 ; Semiconductors, 51:2 (2017), 254–259 |
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2016 |
| 41. |
F. I. Zubov, N. V. Kryzhanovskaya, È. I. Moiseev, Yu. S. Polubavkina, O. I. Simchuk, M. M. Kulagina, Yu. M. Zadiranov, S. I. Troshkov, A. A. Lipovskii, M. V. Maksimov, A. E. Zhukov, “Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1425–1428 ; Semiconductors, 50:10 (2016), 1408–1411 |
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| 42. |
L. V. Asryan, F. I. Zubov, N. V. Kryzhanovskaya, M. V. Maksimov, A. E. Zhukov, “Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1380–1386 ; Semiconductors, 50:10 (2016), 1362–1368 |
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| 43. |
A. M. Nadtochiy, N. A. Kalyuzhnyy, S. A. Mintairov, A. S. Payusov, S. S. Rouvimov, M. V. Maksimov, A. E. Zhukov, “Optical properties of hybrid quantum-confined structures with high absorbance”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1202–1207 ; Semiconductors, 50:9 (2016), 1180–1185 |
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| 44. |
A. E. Zhukov, G. E. Cirlin, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, M. A. Kaliteevskii, K. A. Ivanov, N. V. Kryzhanovskaya, M. V. Maksimov, Zh. I. Alferov, “Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 674–678 ; Semiconductors, 50:5 (2016), 662–666 |
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| 45. |
N. V. Kryzhanovskaya, M. V. Maksimov, S. A. Blokhin, M. A. Bobrov, M. M. Kulagina, S. I. Troshkov, Yu. M. Zadiranov, A. A. Lipovskii, È. I. Moiseev, Yu. V. Kudashova, D. A. Livshits, V. M. Ustinov, A. E. Zhukov, “Microdisk injection lasers for the 1.27-$\mu$m spectral range”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 393–397 ; Semiconductors, 50:3 (2016), 390–393 |
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2014 |
| 46. |
N. V. Kryzhanovskaya, M. V. Maksimov, A. E. Zhukov, “Whispering-gallery mode microcavity quantum-dot lasers”, Kvantovaya Elektronika, 44:3 (2014), 189–200 [Quantum Electron., 44:3 (2014), 189–200   ] |
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1996 |
| 47. |
N. N. Ledentsov, V. M. Ustinov, S. V. Ivanov, B. Ya. Mel'tser, M. V. Maksimov, P. S. Kop'ev, D. Bimberg, Zh. I. Alferov, “Ordered quantum-dot arrays in semiconducting matrices”, UFN, 166:4 (1996), 423–428 ; Phys. Usp., 39:4 (1996), 393–398 |
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