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This article is cited in 1 scientific paper (total in 1 paper)
Semiconductor structures, low-dimensional systems, quantum phenomena
Lateral mode discrimination in edge-emitting lasers with spatially modulated facet reflectance
N. Yu. Gordeeva, A. S. Payusova, I. S. Mukhinbc, A. A. Serina, M. M. Kulaginaa, Yu. A. Gusevaa, Yu. M. Shernyakova, Yu. M. Zadiranova, M. V. Maksimovb a Ioffe Institute, St. Petersburg
b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Abstract:
A post-growth technique aimed at spatial modification of facet reflectance of edge-emitting diode lasers has been proposed. It is based on the deposition of an anti-reflection coating and subsequent precise etching with a focused ion beam. The technique allowed suppressing of high-order lateral modes in 10 $\mu$m stripe lasers based on ten layers of InAs/InGaAs quantum dots.
Received: 01.08.2018 Revised: 13.08.2018
Citation:
N. Yu. Gordeev, A. S. Payusov, I. S. Mukhin, A. A. Serin, M. M. Kulagina, Yu. A. Guseva, Yu. M. Shernyakov, Yu. M. Zadiranov, M. V. Maksimov, “Lateral mode discrimination in edge-emitting lasers with spatially modulated facet reflectance”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 211–215; Semiconductors, 53 (2019), 200–204
Linking options:
https://www.mathnet.ru/eng/phts5588 https://www.mathnet.ru/eng/phts/v53/i2/p211
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