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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 11, Pages 20–23
DOI: https://doi.org/10.21883/PJTF.2019.11.47818.17778 (Mi pjtf5418) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Temperature dependence of characteristics of diode lasers with narrow quantum wells of the 1.55 $\mu$m spectral range based on phosphorous-free heterostructures

M. V. Maksimova, Yu. M. Shernyakovab, F. I. Zubova, I. I. Novikovc, A. G. Gladyshevc, L. Ya. Karachinskybd, D. V. Denisovde, S. S. Rochasc, E. S. Kolodeznyic, A. Yu. Egorovc, A. E. Zhukovae

a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Ioffe Institute, St. Petersburg
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
d Connector Optics LLC, St. Petersburg
e Saint Petersburg Electrotechnical University "LETI"
Full-text PDF (118 kB) Citations (1)
DOI: https://doi.org/10.21883/PJTF.2019.11.47818.17778
Abstract: InGaAs/InGaAlAs laser diodes operating in the 1.55-$\mu$m spectral range are studied. It is demonstrated that a certain level of carbon doping (10$^{12}$ cm$^{-2}$ per a single quantum well) allows one to reduce the temperature coefficient of variation of the lasing wavelength in such structures and raise the characteristic temperature of threshold current and differential efficiency at temperatures from 16 to $\sim$50$^\circ$C. These changes are accompanied by an increase in threshold current density and a reduction in differential efficiency.
Keywords: semiconductor laser, quantum well, characteristic temperature, modulation doping.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 14.578.21.0253
Received: 07.03.2019
Revised: 07.03.2019
Accepted: 11.03.2019
English version:
Technical Physics Letters, 2019, Volume 45, Issue 6, Pages 549–552
DOI: https://doi.org/10.1134/S1063785019060129
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. V. Maksimov, Yu. M. Shernyakov, F. I. Zubov, I. I. Novikov, A. G. Gladyshev, L. Ya. Karachinsky, D. V. Denisov, S. S. Rochas, E. S. Kolodeznyi, A. Yu. Egorov, A. E. Zhukov, “Temperature dependence of characteristics of diode lasers with narrow quantum wells of the 1.55 $\mu$m spectral range based on phosphorous-free heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019), 20–23; Tech. Phys. Lett., 45:6 (2019), 549–552
Citation in format AMSBIB
\Bibitem{MakSheZub19}
\by M.~V.~Maksimov, Yu.~M.~Shernyakov, F.~I.~Zubov, I.~I.~Novikov, A.~G.~Gladyshev, L.~Ya.~Karachinsky, D.~V.~Denisov, S.~S.~Rochas, E.~S.~Kolodeznyi, A.~Yu.~Egorov, A.~E.~Zhukov
\paper Temperature dependence of characteristics of diode lasers with narrow quantum wells of the 1.55 $\mu$m spectral range based on phosphorous-free heterostructures
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 11
\pages 20--23
\mathnet{http://mi.mathnet.ru/pjtf5418}
\crossref{https://doi.org/10.21883/PJTF.2019.11.47818.17778}
\elib{https://elibrary.ru/item.asp?id=41131033}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 6
\pages 549--552
\crossref{https://doi.org/10.1134/S1063785019060129}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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