G. Abdurakhmanov, V. I. Shimanski, B. L. Oksengendler, B. E. Umirzakov, A. N. Urokov, “Pseudogap, nanocrystals and electrical conductivity of doped silicate glass”, Zhurnal Tekhnicheskoi Fiziki, 91:2 (2021), 281–286; Tech. Phys., 66:2 (2021), 269–274
B. E. Umirzakov, S. B. Donaev, R. M. Yorkulov, R. Kh. Ashurov, V. M. Rotstein, “Composition and morphology of Si(111) surface with SiO$_{2}$ film of different thickness”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1045–1048
3.
Z. A. Isakhanov, B. E. Umirzakov, S. S. Nasriddinov, Z. E. Ìuhtarov, R. M. Yorkulov, “Study of the critical angle of channeling of active metal ions through thin aluminum films”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:23 (2021), 12–14
4.
B. E. Umirzakov, J. Sh. Sodikjanov, D. A. Tashmukhamedova, A. A. Abduvaitov, E. M. Rabbimov, “Adsorption of Ba atoms influences the composition, emission, and optical properties of CdS single crystals”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:12 (2021), 3–5; Tech. Phys. Lett., 47:8 (2021), 620–623
B. E. Umirzakov, Z. A. Isakhanov, G. Kh. Allayarova, R. M. Yorkulov, “The effect of stepwise postimplantation annealing on the composition and structure of silicon surface layers implanted with alkali metal ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:1 (2021), 15–19; Tech. Phys. Lett., 47:1 (2021), 11–15
2020
6.
B. E. Umirzakov, D. A. Tashmukhamedova, S. T. Gulyamova, G. Kh. Allayarova, “Effect of the Ba$^+$ ion implantation on the composition and electronic properties of MoO$_{3}$/Mo (111) films”, Zhurnal Tekhnicheskoi Fiziki, 90:5 (2020), 831–834; Tech. Phys., 65:5 (2020), 795–798
Z. A. Isakhanov, I. O. Kosimov, B. E. Umirzakov, R. M. Yorkulov, “Modification of the surface properties of free Si–Cu films by implantation of active metal ions”, Zhurnal Tekhnicheskoi Fiziki, 90:1 (2020), 123–127; Tech. Phys., 65:1 (2020), 114–117
B. E. Umirzakov, D. A. Tashmukhamedova, A. K. Tashatov, N. M. Mustafoeva, D. M. Muradkabilov, “Effect of the disordering of thin surface layers on the electronic and optical properties of Si(111)”, Fizika i Tekhnika Poluprovodnikov, 54:11 (2020), 1211–1216; Semiconductors, 54:11 (2020), 1424–1429
S. B. Donaev, B. E. Umirzakov, “Effect of the implantation of Al$^+$ ions on the composition, electronic and crystalline structure of the GaP(111) surface”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 716–719; Semiconductors, 54:8 (2020), 860–862
D. A. Tashmukhamedova, M. B. Yusupjanova, G. Kh. Allayarova, B. E. Umirzakov, “Crystal structure and band gap of nanoscale phases of Si formed at various depths of the near-surface region of SiO$_{2}$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020), 32–34; Tech. Phys. Lett., 46:10 (2020), 972–975
S. B. Donaev, B. E. Umirzakov, N. M. Mustafaeva, “Emissivity of laser-activated Pd–Ba alloy”, Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019), 1626–1629; Tech. Phys., 64:10 (2019), 1541–1543
S. Zh. Nimatov, B. E. Umirzakov, F. Ya. Khudaikulov, D. S. Rumi, “Variation of the crystal structure on Si(111) surface induced by ion bombardment and subsequent annealing”, Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019), 1611–1614; Tech. Phys., 64:10 (2019), 1527–1529
B. E. Umirzakov, S. B. Donaev, N. M. Mustafaeva, “Electronic and optical properties of GaAlAs/GaAs thin films”, Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019), 1589–1591; Tech. Phys., 64:10 (2019), 1506–1508
B. E. Umirzakov, D. A. Tashmukhamedova, M. A. Tursunov, Y. S. Ergashov, G. Kh. Allayarova, “Escape depth of secondary and photoelectrons from CdTe films with a Ba film”, Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019), 1115–1117; Tech. Phys., 64:7 (2019), 1051–1054
B. E. Umirzakov, M. K. Ruzibaeva, Z. A. Isakhanov, R. M. Yorkulov, “Formation of nanodimensional SiO$_{2}$ films on the surface of a free si/cu film system by O$_{2}^{+}$ ion implantation”, Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019), 935–937; Tech. Phys., 64:6 (2019), 881–883
B. E. Umirzakov, D. A. Tashmukhamedova, A. K. Tashatov, N. M. Mustafoeva, “Electronic and optical properties of NiSi$_{2}$/Si nanofilms”, Zhurnal Tekhnicheskoi Fiziki, 89:5 (2019), 759–761; Tech. Phys., 64:5 (2019), 708–710
B. E. Umirzakov, R. Kh. Ashurov, S. B. Donaev, “The morphology and electronic properties of si nanoscale structures on a CaF$_{2}$ surface”, Zhurnal Tekhnicheskoi Fiziki, 89:2 (2019), 264–267; Tech. Phys., 64:2 (2019), 232–235
B. E. Umirzakov, D. A. Tashmukhamedova, G. Kh. Allayarova, J. Sh. Sodikjanov, “The effect of the formation of silicides on the resistivity of silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:7 (2019), 49–51; Tech. Phys. Lett., 45:4 (2019), 356–358
Y. S. Ergashov, B. E. Umirzakov, “Structure and properties of a bilayer nanodimensional CoSi$_{2}$/Si/CoSi$_{2}$/Si system obtained by ion implantation”, Zhurnal Tekhnicheskoi Fiziki, 88:12 (2018), 1859–1862; Tech. Phys., 63:12 (2018), 1820–1823
Kh. Kh. Boltaev, J. Sh. Sodikjanov, D. A. Tashmukhamedova, B. E. Umirzakov, “Composition and structure of Ga$_{1-x}$Na$_{x}$As nanolayers produced near the GaAs surface by Na$^+$ implantation”, Zhurnal Tekhnicheskoi Fiziki, 87:12 (2017), 1884–1886; Tech. Phys., 62:12 (2017), 1882–1884
Y. S. Ergashov, Z. A. Isakhanov, B. E. Umirzakov, “Transmission of electromagnetic waves through thin Cu films”, Zhurnal Tekhnicheskoi Fiziki, 86:6 (2016), 156–158; Tech. Phys., 61:6 (2016), 953–955
M. B. Yusupjanova, D. A. Tashmukhamedova, B. E. Umirzakov, “Composition, morphology, and electronic structure of the nanophases created on the SiO$_{2}$ Surface by Ar$^{+}$ ion bombardment”, Zhurnal Tekhnicheskoi Fiziki, 86:4 (2016), 148–150; Tech. Phys., 61:4 (2016), 628–630
Contact us: