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Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 90, Issue 1, Pages 123–127
DOI: https://doi.org/10.21883/JTF.2020.01.48672.202-19 (Mi jtf5417) 		 
This article is cited in 5 scientific papers (total in 5 papers)

Physics of nanostructures

Modification of the surface properties of free Si–Cu films by implantation of active metal ions

Z. A. Isakhanova, I. O. Kosimovb, B. E. Umirzakovb, R. M. Yorkulova

a Institute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent
b Tashkent State Technical University
Full-text PDF (268 kB) Citations (5)
DOI: https://doi.org/10.21883/JTF.2020.01.48672.202-19
Abstract: Using the methods of Auger electron spectroscopy, electron energy loss spectroscopy, and UV photoelectron spectroscopy, the influence of Ba$^+$ ion implantation on the composition, crystal structure, and electron configuration of the surface of Si–Cu(100) free films have been investigated. Specifically, it has been shown that Ba ion implantation and subsequent annealing make it possible to obtain BaSi nanofilms with some excess (to 10 at %) of unbounded silicon atoms.
Received: 20.05.2019
Revised: 20.05.2019
Accepted: 03.07.2019
English version:
Technical Physics, 2020, Volume 65, Issue 1, Pages 114–117
DOI: https://doi.org/10.1134/S1063784220010090
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Z. A. Isakhanov, I. O. Kosimov, B. E. Umirzakov, R. M. Yorkulov, “Modification of the surface properties of free Si–Cu films by implantation of active metal ions”, Zhurnal Tekhnicheskoi Fiziki, 90:1 (2020), 123–127; Tech. Phys., 65:1 (2020), 114–117
Citation in format AMSBIB
\Bibitem{IsaKosUmi20}
\by Z.~A.~Isakhanov, I.~O.~Kosimov, B.~E.~Umirzakov, R.~M.~Yorkulov
\paper Modification of the surface properties of free Si--Cu films by implantation of active metal ions
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 90
\issue 1
\pages 123--127
\mathnet{http://mi.mathnet.ru/jtf5417}
\crossref{https://doi.org/10.21883/JTF.2020.01.48672.202-19}
\elib{https://elibrary.ru/item.asp?id=42744561}
\transl
\jour Tech. Phys.
\yr 2020
\vol 65
\issue 1
\pages 114--117
\crossref{https://doi.org/10.1134/S1063784220010090}
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    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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