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This article is cited in 2 scientific papers (total in 2 papers)
Physical electronics
Electronic and optical properties of NiSi$_{2}$/Si nanofilms
B. E. Umirzakov, D. A. Tashmukhamedova, A. K. Tashatov, N. M. Mustafoeva Tashkent State Technical University
Abstract:
Optimum conditions for ion implantation and subsequent annealing for the fabrication of NiSi$_2$/Si (111) nanofilms with a thickness of 3.0 – 6.0 nm are determined. It is demonstrated that the energy-band parameters and optical properties typical of thick NiSi$_2$ films start to set in at $d$ = 5.0 – 6.0 nm.
Received: 16.05.2018 Revised: 02.10.2018 Accepted: 14.11.2018
Citation:
B. E. Umirzakov, D. A. Tashmukhamedova, A. K. Tashatov, N. M. Mustafoeva, “Electronic and optical properties of NiSi$_{2}$/Si nanofilms”, Zhurnal Tekhnicheskoi Fiziki, 89:5 (2019), 759–761; Tech. Phys., 64:5 (2019), 708–710
Linking options:
https://www.mathnet.ru/eng/jtf5624 https://www.mathnet.ru/eng/jtf/v89/i5/p759
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Abstract page: | 48 | Full-text PDF : | 8 |
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