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Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 89, Issue 5, Pages 759–761
DOI: https://doi.org/10.21883/JTF.2019.05.47481.192-18 (Mi jtf5624) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Physical electronics

Electronic and optical properties of NiSi$_{2}$/Si nanofilms

B. E. Umirzakov, D. A. Tashmukhamedova, A. K. Tashatov, N. M. Mustafoeva

Tashkent State Technical University
Full-text PDF (101 kB) Citations (2)
DOI: https://doi.org/10.21883/JTF.2019.05.47481.192-18
Abstract: Optimum conditions for ion implantation and subsequent annealing for the fabrication of NiSi$_2$/Si (111) nanofilms with a thickness of 3.0 – 6.0 nm are determined. It is demonstrated that the energy-band parameters and optical properties typical of thick NiSi$_2$ films start to set in at $d$ = 5.0 – 6.0 nm.
Received: 16.05.2018
Revised: 02.10.2018
Accepted: 14.11.2018
English version:
Technical Physics, 2019, Volume 64, Issue 5, Pages 708–710
DOI: https://doi.org/10.1134/S1063784219050244
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: B. E. Umirzakov, D. A. Tashmukhamedova, A. K. Tashatov, N. M. Mustafoeva, “Electronic and optical properties of NiSi$_{2}$/Si nanofilms”, Zhurnal Tekhnicheskoi Fiziki, 89:5 (2019), 759–761; Tech. Phys., 64:5 (2019), 708–710
Citation in format AMSBIB
\Bibitem{UmiTasTas19}
\by B.~E.~Umirzakov, D.~A.~Tashmukhamedova, A.~K.~Tashatov, N.~M.~Mustafoeva
\paper Electronic and optical properties of NiSi$_{2}$/Si nanofilms
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 89
\issue 5
\pages 759--761
\mathnet{http://mi.mathnet.ru/jtf5624}
\crossref{https://doi.org/10.21883/JTF.2019.05.47481.192-18}
\elib{https://elibrary.ru/item.asp?id=39133811}
\transl
\jour Tech. Phys.
\yr 2019
\vol 64
\issue 5
\pages 708--710
\crossref{https://doi.org/10.1134/S1063784219050244}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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