|
Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 86, Issue 4, Pages 148–150
(Mi jtf6593)
|
|
|
|
This article is cited in 6 scientific papers (total in 6 papers)
Brief Communications
Composition, morphology, and electronic structure of the nanophases created on the SiO$_{2}$ Surface by Ar$^{+}$ ion bombardment
M. B. Yusupjanova, D. A. Tashmukhamedova, B. E. Umirzakov Tashkent State Technical University
Abstract:
The influence of Ar$^{+}$ bombardment on the composition and the structure of the SiO$_{2}$/Si surface is studied. A thin Si film is found to form on the SiO$_{2}$ surface subjected to high-dose ion bombardment.
Keywords:
Auger Spectrum, Cluster Phase, Nonstoichiometric Oxide, Postimplantation Annealing, Auger Electron Spectroscopy Result.
Received: 08.07.2015
Citation:
M. B. Yusupjanova, D. A. Tashmukhamedova, B. E. Umirzakov, “Composition, morphology, and electronic structure of the nanophases created on the SiO$_{2}$ Surface by Ar$^{+}$ ion bombardment”, Zhurnal Tekhnicheskoi Fiziki, 86:4 (2016), 148–150; Tech. Phys., 61:4 (2016), 628–630
Linking options:
https://www.mathnet.ru/eng/jtf6593 https://www.mathnet.ru/eng/jtf/v86/i4/p148
|
Statistics & downloads: |
Abstract page: | 37 | Full-text PDF : | 8 |
|