|
This article is cited in 3 scientific papers (total in 3 papers)
Crystal structure and band gap of nanoscale phases of Si formed at various depths of the near-surface region of SiO$_{2}$
D. A. Tashmukhamedova, M. B. Yusupjanova, G. Kh. Allayarova, B. E. Umirzakov Tashkent State Technical University named after Islam Karimov
Abstract:
Si nanophases and nanolayers were obtained by bombardment with Ar$^+$ ions followed by annealing at various depths of silicon oxide. As ion energy $E_0$ varies from 10 to 25 keV, the average depth of Si nanophase formation varies from 15 to 25 nm. It is shown that, as the sizes of Si nanophases vary from $\sim$10 to 25 nm, band gap $E_g$ decreases from 1.9 to 1.5 eV. For Si nanolayers, $E_g$ is $\sim$1.1–1.2 eV.
Keywords:
heterostructure, ion bombardment, nanolayer, light absorption, degree of coverage.
Received: 06.05.2020 Revised: 03.07.2020 Accepted: 03.07.2020
Citation:
D. A. Tashmukhamedova, M. B. Yusupjanova, G. Kh. Allayarova, B. E. Umirzakov, “Crystal structure and band gap of nanoscale phases of Si formed at various depths of the near-surface region of SiO$_{2}$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020), 32–34; Tech. Phys. Lett., 46:10 (2020), 972–975
Linking options:
https://www.mathnet.ru/eng/pjtf4978 https://www.mathnet.ru/eng/pjtf/v46/i19/p32
|
Statistics & downloads: |
Abstract page: | 49 | Full-text PDF : | 41 |
|