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Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 90, Issue 5, Pages 831–834
DOI: https://doi.org/10.21883/JTF.2020.05.49186.338-19
(Mi jtf5317)
 

This article is cited in 6 scientific papers (total in 6 papers)

Physical science of materials

Effect of the Ba$^+$ ion implantation on the composition and electronic properties of MoO$_{3}$/Mo (111) films

B. E. Umirzakov, D. A. Tashmukhamedova, S. T. Gulyamova, G. Kh. Allayarova

Tashkent State Technical University named after Islam Karimov
Full-text PDF (115 kB) Citations (6)
Abstract: It is shown that a film consisting of the Mo–O, Mo–Ba–O, and Ba–O compounds is formed in the ion-implanted layer upon implantation of MoO$_{3}$ with the Ba$^+$ ions. Such a process leads to a sharp variation in the density of state of valence electrons, a decrease in work function $e\varphi$ to 2.7 eV, a decrease in band gap $E_g$ by a factor of about 1.5, and an increase in maximum coefficient of the secondary electron emission $\sigma_ m$ by a factor of 1.5. It is shown that the emission efficiency of the secondary electrons of the near-surface layer of pure Mo is significantly higher than the emission efficiency of the ion-implanted Mo layers. Thus, an increase in coefficient $\sigma_ m$ after the ion implantation is predominantly due to a decrease in surface work function $e\varphi$. Heating of the ion-implanted MoO$_{3}$ to 900 K leads to a decrease in work function $e\varphi$ to 2 eV, and coefficient $\sigma_ m$ increases when temperature increases to 1000 K.
Received: 11.10.2019
Revised: 11.10.2019
Accepted: 11.11.2019
English version:
Technical Physics, 2020, Volume 65, Issue 5, Pages 795–798
DOI: https://doi.org/10.1134/S1063784220050242
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: B. E. Umirzakov, D. A. Tashmukhamedova, S. T. Gulyamova, G. Kh. Allayarova, “Effect of the Ba$^+$ ion implantation on the composition and electronic properties of MoO$_{3}$/Mo (111) films”, Zhurnal Tekhnicheskoi Fiziki, 90:5 (2020), 831–834; Tech. Phys., 65:5 (2020), 795–798
Citation in format AMSBIB
\Bibitem{UmiTasGul20}
\by B.~E.~Umirzakov, D.~A.~Tashmukhamedova, S.~T.~Gulyamova, G.~Kh.~Allayarova
\paper Effect of the Ba$^+$ ion implantation on the composition and electronic properties of MoO$_{3}$/Mo (111) films
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 90
\issue 5
\pages 831--834
\mathnet{http://mi.mathnet.ru/jtf5317}
\crossref{https://doi.org/10.21883/JTF.2020.05.49186.338-19}
\elib{https://elibrary.ru/item.asp?id=42906018}
\transl
\jour Tech. Phys.
\yr 2020
\vol 65
\issue 5
\pages 795--798
\crossref{https://doi.org/10.1134/S1063784220050242}
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  • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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