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This article is cited in 6 scientific papers (total in 6 papers)
Physical science of materials
Effect of the Ba$^+$ ion implantation on the composition and electronic properties of MoO$_{3}$/Mo (111) films
B. E. Umirzakov, D. A. Tashmukhamedova, S. T. Gulyamova, G. Kh. Allayarova Tashkent State Technical University named after Islam Karimov
Abstract:
It is shown that a film consisting of the Mo–O, Mo–Ba–O, and Ba–O compounds is formed in the ion-implanted layer upon implantation of MoO$_{3}$ with the Ba$^+$ ions. Such a process leads to a sharp variation in the density of state of valence electrons, a decrease in work function $e\varphi$ to 2.7 eV, a decrease in band gap $E_g$ by a factor of about 1.5, and an increase in maximum coefficient of the secondary electron emission $\sigma_ m$ by a factor of 1.5. It is shown that the emission efficiency of the secondary electrons of the near-surface layer of pure Mo is significantly higher than the emission efficiency of the ion-implanted Mo layers. Thus, an increase in coefficient $\sigma_ m$ after the ion implantation is predominantly due to a decrease in surface work function $e\varphi$. Heating of the ion-implanted MoO$_{3}$ to 900 K leads to a decrease in work function $e\varphi$ to 2 eV, and coefficient $\sigma_ m$ increases when temperature increases to 1000 K.
Received: 11.10.2019 Revised: 11.10.2019 Accepted: 11.11.2019
Citation:
B. E. Umirzakov, D. A. Tashmukhamedova, S. T. Gulyamova, G. Kh. Allayarova, “Effect of the Ba$^+$ ion implantation on the composition and electronic properties of MoO$_{3}$/Mo (111) films”, Zhurnal Tekhnicheskoi Fiziki, 90:5 (2020), 831–834; Tech. Phys., 65:5 (2020), 795–798
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https://www.mathnet.ru/eng/jtf5317 https://www.mathnet.ru/eng/jtf/v90/i5/p831
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