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This article is cited in 9 scientific papers (total in 9 papers)
Physical electronics
Escape depth of secondary and photoelectrons from CdTe films with a Ba film
B. E. Umirzakov, D. A. Tashmukhamedova, M. A. Tursunov, Y. S. Ergashov, G. Kh. Allayarova Tashkent State Technical University
Abstract:
Escape zone depths $\lambda'$ for true-secondary electrons and photoelectrons from pure CdTe and CdTe with a Ba film of thickness $\theta\le$ 1 monolayer have been estimated for the first time. It is shown that upon a decrease of the work function of the surface by 2 eV, the value of $\lambda'$ increases by 1.2–1.3 times.
Received: 10.01.2019 Revised: 10.01.2019 Accepted: 20.02.2019
Citation:
B. E. Umirzakov, D. A. Tashmukhamedova, M. A. Tursunov, Y. S. Ergashov, G. Kh. Allayarova, “Escape depth of secondary and photoelectrons from CdTe films with a Ba film”, Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019), 1115–1117; Tech. Phys., 64:7 (2019), 1051–1054
Linking options:
https://www.mathnet.ru/eng/jtf5577 https://www.mathnet.ru/eng/jtf/v89/i7/p1115
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