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Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 89, Issue 7, Pages 1115–1117
DOI: https://doi.org/10.21883/JTF.2019.07.47809.4-19
(Mi jtf5577)
 

This article is cited in 9 scientific papers (total in 9 papers)

Physical electronics

Escape depth of secondary and photoelectrons from CdTe films with a Ba film

B. E. Umirzakov, D. A. Tashmukhamedova, M. A. Tursunov, Y. S. Ergashov, G. Kh. Allayarova

Tashkent State Technical University
Full-text PDF (94 kB) Citations (9)
Abstract: Escape zone depths $\lambda'$ for true-secondary electrons and photoelectrons from pure CdTe and CdTe with a Ba film of thickness $\theta\le$ 1 monolayer have been estimated for the first time. It is shown that upon a decrease of the work function of the surface by 2 eV, the value of $\lambda'$ increases by 1.2–1.3 times.
Received: 10.01.2019
Revised: 10.01.2019
Accepted: 20.02.2019
English version:
Technical Physics, 2019, Volume 64, Issue 7, Pages 1051–1054
DOI: https://doi.org/10.1134/S1063784219070260
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: B. E. Umirzakov, D. A. Tashmukhamedova, M. A. Tursunov, Y. S. Ergashov, G. Kh. Allayarova, “Escape depth of secondary and photoelectrons from CdTe films with a Ba film”, Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019), 1115–1117; Tech. Phys., 64:7 (2019), 1051–1054
Citation in format AMSBIB
\Bibitem{UmiTasTur19}
\by B.~E.~Umirzakov, D.~A.~Tashmukhamedova, M.~A.~Tursunov, Y.~S.~Ergashov, G.~Kh.~Allayarova
\paper Escape depth of secondary and photoelectrons from CdTe films with a Ba film
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 89
\issue 7
\pages 1115--1117
\mathnet{http://mi.mathnet.ru/jtf5577}
\crossref{https://doi.org/10.21883/JTF.2019.07.47809.4-19}
\elib{https://elibrary.ru/item.asp?id=41130858}
\transl
\jour Tech. Phys.
\yr 2019
\vol 64
\issue 7
\pages 1051--1054
\crossref{https://doi.org/10.1134/S1063784219070260}
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  • This publication is cited in the following 9 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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