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Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 89, Issue 2, Pages 264–267
DOI: https://doi.org/10.21883/JTF.2019.02.47081.185-18 (Mi jtf5700) 		 
This article is cited in 4 scientific papers (total in 4 papers)

Solid-State Electronics

The morphology and electronic properties of si nanoscale structures on a CaF$_{2}$ surface

B. E. Umirzakov, R. Kh. Ashurov, S. B. Donaev

Tashkent State Technical University named after Islam Karimov
Full-text PDF (452 kB) Citations (4)
DOI: https://doi.org/10.21883/JTF.2019.02.47081.185-18
Abstract: The surface morphology, crystal structures, and band-energy parameters have been studied for nanofilms and regularly arranged nanoscale Si phases with a thickness of 1–2 nm. The bandgap thickness of nanocrystalline Si phases with 2 – 3 single layers is found to be $\sim$1.4 eV.
Received: 13.05.2018
English version:
Technical Physics, 2019, Volume 64, Issue 2, Pages 232–235
DOI: https://doi.org/10.1134/S1063784219020269
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: B. E. Umirzakov, R. Kh. Ashurov, S. B. Donaev, “The morphology and electronic properties of si nanoscale structures on a CaF$_{2}$ surface”, Zhurnal Tekhnicheskoi Fiziki, 89:2 (2019), 264–267; Tech. Phys., 64:2 (2019), 232–235
Citation in format AMSBIB
\Bibitem{UmiAshDon19}
\by B.~E.~Umirzakov, R.~Kh.~Ashurov, S.~B.~Donaev
\paper The morphology and electronic properties of si nanoscale structures on a CaF$_{2}$ surface
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 89
\issue 2
\pages 264--267
\mathnet{http://mi.mathnet.ru/jtf5700}
\crossref{https://doi.org/10.21883/JTF.2019.02.47081.185-18}
\elib{https://elibrary.ru/item.asp?id=37479417}
\transl
\jour Tech. Phys.
\yr 2019
\vol 64
\issue 2
\pages 232--235
\crossref{https://doi.org/10.1134/S1063784219020269}
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Zhurnal Tekhnicheskoi Fiziki Zhurnal Tekhnicheskoi Fiziki
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