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Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 88, Issue 12, Pages 1859–1862
DOI: https://doi.org/10.21883/JTF.2018.12.46788.12-18 (Mi jtf5748) 		 
This article is cited in 11 scientific papers (total in 11 papers)

Solid-State Electronics

Structure and properties of a bilayer nanodimensional CoSi$_{2}$/Si/CoSi$_{2}$/Si system obtained by ion implantation

Y. S. Ergashov, B. E. Umirzakov

Tashkent State Technical University
Full-text PDF (266 kB) Citations (11)
DOI: https://doi.org/10.21883/JTF.2018.12.46788.12-18
Abstract: Bilayer CoSi$_{2}$/Si/CoSi$_{2}$/Si system has been obtained by the method of ion implantation, and optimal conditions for implantation and postimplantation annealing have been found. It has been shown that this system forms when the high and low ion energies differ by no less than 15–20 keV. The structures have smooth surface and high crystallinity.
Received: 13.01.2018
English version:
Technical Physics, 2018, Volume 63, Issue 12, Pages 1820–1823
DOI: https://doi.org/10.1134/S1063784218120058
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Y. S. Ergashov, B. E. Umirzakov, “Structure and properties of a bilayer nanodimensional CoSi$_{2}$/Si/CoSi$_{2}$/Si system obtained by ion implantation”, Zhurnal Tekhnicheskoi Fiziki, 88:12 (2018), 1859–1862; Tech. Phys., 63:12 (2018), 1820–1823
Citation in format AMSBIB
\Bibitem{ErgUmi18}
\by Y.~S.~Ergashov, B.~E.~Umirzakov
\paper Structure and properties of a bilayer nanodimensional CoSi$_{2}$/Si/CoSi$_{2}$/Si system obtained by ion implantation
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2018
\vol 88
\issue 12
\pages 1859--1862
\mathnet{http://mi.mathnet.ru/jtf5748}
\crossref{https://doi.org/10.21883/JTF.2018.12.46788.12-18}
\elib{https://elibrary.ru/item.asp?id=36929262}
\transl
\jour Tech. Phys.
\yr 2018
\vol 63
\issue 12
\pages 1820--1823
\crossref{https://doi.org/10.1134/S1063784218120058}
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    • This publication is cited in the following 11 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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