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Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 89, Issue 10, Pages 1611–1614
DOI: https://doi.org/10.21883/JTF.2019.10.48181.414-18
(Mi jtf5502)
 

This article is cited in 8 scientific papers (total in 8 papers)

Electrophysics

Variation of the crystal structure on Si(111) surface induced by ion bombardment and subsequent annealing

S. Zh. Nimatov, B. E. Umirzakov, F. Ya. Khudaikulov, D. S. Rumi

Tashkent State Technical University named after Islam Karimov
Full-text PDF (369 kB) Citations (8)
Abstract: Modification of Si(111) surface due to ion bombardment and subsequent annealing has been studied. It has been found that annealing following bombardment with 0.3- to 1.0-keV ions causes a multilayer metal silicide coating to form on the surface. It has also been established that work function $\varphi$ of Si(111) variously depends on dose at different energies of types of ions.
Keywords: ion bombardment, annealing, monolayer film, structure, work output.
Funding agency Grant number
Uzbek-Russian Foundation for Basic Research Ф2-53
This study was supported by the Foundation for Basic Research of the Republic of Uzbekistan, project no. F2-53.
Received: 29.11.2018
Revised: 29.11.2018
Accepted: 10.04.2019
English version:
Technical Physics, 2019, Volume 64, Issue 10, Pages 1527–1529
DOI: https://doi.org/10.1134/S1063784219100153
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. Zh. Nimatov, B. E. Umirzakov, F. Ya. Khudaikulov, D. S. Rumi, “Variation of the crystal structure on Si(111) surface induced by ion bombardment and subsequent annealing”, Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019), 1611–1614; Tech. Phys., 64:10 (2019), 1527–1529
Citation in format AMSBIB
\Bibitem{NimUmiKhu19}
\by S.~Zh.~Nimatov, B.~E.~Umirzakov, F.~Ya.~Khudaikulov, D.~S.~Rumi
\paper Variation of the crystal structure on Si(111) surface induced by ion bombardment and subsequent annealing
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 89
\issue 10
\pages 1611--1614
\mathnet{http://mi.mathnet.ru/jtf5502}
\crossref{https://doi.org/10.21883/JTF.2019.10.48181.414-18}
\elib{https://elibrary.ru/item.asp?id=41174998}
\transl
\jour Tech. Phys.
\yr 2019
\vol 64
\issue 10
\pages 1527--1529
\crossref{https://doi.org/10.1134/S1063784219100153}
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  • This publication is cited in the following 8 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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