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This article is cited in 8 scientific papers (total in 8 papers)
Electrophysics
Variation of the crystal structure on Si(111) surface induced by ion bombardment and subsequent annealing
S. Zh. Nimatov, B. E. Umirzakov, F. Ya. Khudaikulov, D. S. Rumi Tashkent State Technical University named after Islam Karimov
Abstract:
Modification of Si(111) surface due to ion bombardment and subsequent annealing has been studied. It has been found that annealing following bombardment with 0.3- to 1.0-keV ions causes a multilayer metal silicide coating to form on the surface. It has also been established that work function $\varphi$ of Si(111) variously depends on dose at different energies of types of ions.
Keywords:
ion bombardment, annealing, monolayer film, structure, work output.
Received: 29.11.2018 Revised: 29.11.2018 Accepted: 10.04.2019
Citation:
S. Zh. Nimatov, B. E. Umirzakov, F. Ya. Khudaikulov, D. S. Rumi, “Variation of the crystal structure on Si(111) surface induced by ion bombardment and subsequent annealing”, Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019), 1611–1614; Tech. Phys., 64:10 (2019), 1527–1529
Linking options:
https://www.mathnet.ru/eng/jtf5502 https://www.mathnet.ru/eng/jtf/v89/i10/p1611
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