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Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 89, Issue 10, Pages 1589–1591
DOI: https://doi.org/10.21883/JTF.2019.10.48177.2475
(Mi jtf5498)
 

This article is cited in 8 scientific papers (total in 8 papers)

Solid-State Electronics

Electronic and optical properties of GaAlAs/GaAs thin films

B. E. Umirzakov, S. B. Donaev, N. M. Mustafaeva

Tashkent State Technical University named after Islam Karimov
Full-text PDF (98 kB) Citations (8)
Abstract: It is shown that the formation of GaAlAs nanofilms on the GaAs surface leads to an increase in the value of the emission coefficient of true secondary electrons and of the quantum yield of photoelectrons, which is explained by the difference in the depth of the exit zone of true secondary electrons for GaAs and GaAlAs.
Keywords: Emission properties, optical properties, nanofilm, ion implantation, GaAs films, nanocrystalline phases.
Received: 09.09.2017
Revised: 16.03.2018
Accepted: 01.03.2019
English version:
Technical Physics, 2019, Volume 64, Issue 10, Pages 1506–1508
DOI: https://doi.org/10.1134/S1063784219100220
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: B. E. Umirzakov, S. B. Donaev, N. M. Mustafaeva, “Electronic and optical properties of GaAlAs/GaAs thin films”, Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019), 1589–1591; Tech. Phys., 64:10 (2019), 1506–1508
Citation in format AMSBIB
\Bibitem{UmiDonMus19}
\by B.~E.~Umirzakov, S.~B.~Donaev, N.~M.~Mustafaeva
\paper Electronic and optical properties of GaAlAs/GaAs thin films
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 89
\issue 10
\pages 1589--1591
\mathnet{http://mi.mathnet.ru/jtf5498}
\crossref{https://doi.org/10.21883/JTF.2019.10.48177.2475}
\elib{https://elibrary.ru/item.asp?id=41174992}
\transl
\jour Tech. Phys.
\yr 2019
\vol 64
\issue 10
\pages 1506--1508
\crossref{https://doi.org/10.1134/S1063784219100220}
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  • This publication is cited in the following 8 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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