Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 89, Issue 10, Pages 1589–1591
DOI: https://doi.org/10.21883/JTF.2019.10.48177.2475
(Mi jtf5498)
 

This article is cited in 8 scientific papers (total in 8 papers)

Solid-State Electronics

Electronic and optical properties of GaAlAs/GaAs thin films

B. E. Umirzakov, S. B. Donaev, N. M. Mustafaeva

Tashkent State Technical University named after Islam Karimov
Full-text PDF (98 kB) Citations (8)
Abstract: It is shown that the formation of GaAlAs nanofilms on the GaAs surface leads to an increase in the value of the emission coefficient of true secondary electrons and of the quantum yield of photoelectrons, which is explained by the difference in the depth of the exit zone of true secondary electrons for GaAs and GaAlAs.
Keywords: Emission properties, optical properties, nanofilm, ion implantation, GaAs films, nanocrystalline phases.
Received: 09.09.2017
Revised: 16.03.2018
Accepted: 01.03.2019
English version:
Technical Physics, 2019, Volume 64, Issue 10, Pages 1506–1508
DOI: https://doi.org/10.1134/S1063784219100220
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: B. E. Umirzakov, S. B. Donaev, N. M. Mustafaeva, “Electronic and optical properties of GaAlAs/GaAs thin films”, Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019), 1589–1591; Tech. Phys., 64:10 (2019), 1506–1508
Citation in format AMSBIB
\Bibitem{UmiDonMus19}
\by B.~E.~Umirzakov, S.~B.~Donaev, N.~M.~Mustafaeva
\paper Electronic and optical properties of GaAlAs/GaAs thin films
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 89
\issue 10
\pages 1589--1591
\mathnet{http://mi.mathnet.ru/jtf5498}
\crossref{https://doi.org/10.21883/JTF.2019.10.48177.2475}
\elib{https://elibrary.ru/item.asp?id=41174992}
\transl
\jour Tech. Phys.
\yr 2019
\vol 64
\issue 10
\pages 1506--1508
\crossref{https://doi.org/10.1134/S1063784219100220}
Linking options:
  • https://www.mathnet.ru/eng/jtf5498
  • https://www.mathnet.ru/eng/jtf/v89/i10/p1589
  • This publication is cited in the following 8 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Zhurnal Tekhnicheskoi Fiziki Zhurnal Tekhnicheskoi Fiziki
    Statistics & downloads:
    Abstract page:40
    Full-text PDF :19
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024