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This article is cited in 8 scientific papers (total in 8 papers)
Solid-State Electronics
Electronic and optical properties of GaAlAs/GaAs thin films
B. E. Umirzakov, S. B. Donaev, N. M. Mustafaeva Tashkent State Technical University named after Islam Karimov
Abstract:
It is shown that the formation of GaAlAs nanofilms on the GaAs surface leads to an increase in the value of the emission coefficient of true secondary electrons and of the quantum yield of photoelectrons, which is explained by the difference in the depth of the exit zone of true secondary electrons for GaAs and GaAlAs.
Keywords:
Emission properties, optical properties, nanofilm, ion implantation, GaAs films, nanocrystalline phases.
Received: 09.09.2017 Revised: 16.03.2018 Accepted: 01.03.2019
Citation:
B. E. Umirzakov, S. B. Donaev, N. M. Mustafaeva, “Electronic and optical properties of GaAlAs/GaAs thin films”, Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019), 1589–1591; Tech. Phys., 64:10 (2019), 1506–1508
Linking options:
https://www.mathnet.ru/eng/jtf5498 https://www.mathnet.ru/eng/jtf/v89/i10/p1589
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Abstract page: | 49 | Full-text PDF : | 23 |
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