Formation of nanodimensional SiO$_{2}$ films on the surface of a free si/cu film system by O$_{2}^{+}$ ion implantation

The composition and parameters of energy bands in thin SiO$_{2}$ films grown on the surface of a free Si/Cu film system have been studied. It has been shown that unlike SiO$_{2}$ films grown on thick films, the value of $E_g$ for thin SiO$_{2}$ films is no higher than $\sim$4.1 eV. This is explained by the presence of Si impurity atoms and nonstoichiometric oxides in the SiO$_{2}$ film, which arise because of the impossibility of heating the system above 700 K.