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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 7, Pages 49–51
DOI: https://doi.org/10.21883/PJTF.2019.07.47539.17650
(Mi pjtf5484)
 

This article is cited in 5 scientific papers (total in 5 papers)

The effect of the formation of silicides on the resistivity of silicon

B. E. Umirzakov, D. A. Tashmukhamedova, G. Kh. Allayarova, J. Sh. Sodikjanov

Tashkent State Technical University named after Islam Karimov, Tashkent, Uzbekistan
Full-text PDF (102 kB) Citations (5)
Abstract: The effect of the formation of thin films of nickel silicides on the migration of intrinsic $p$-type impurities in silicon was studied for the first time. It was found that bulk resistance $\rho_v$ of a single Si crystal increases by a factor of 3–4 if a NiSi$_{2}$ film with thickness $\theta\ge$ 50–100 $\mathring{\mathrm{A}}$ forms on its surface. This is attributable to the migration of boron atoms toward the silicide film. The Si layer thickness enabling measurable boron migration was estimated at 800–1000 $\mathring{\mathrm{A}}$.
Received: 21.12.2018
Revised: 21.12.2018
Accepted: 16.01.2019
English version:
Technical Physics Letters, 2019, Volume 45, Issue 4, Pages 356–358
DOI: https://doi.org/10.1134/S1063785019040175
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: B. E. Umirzakov, D. A. Tashmukhamedova, G. Kh. Allayarova, J. Sh. Sodikjanov, “The effect of the formation of silicides on the resistivity of silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:7 (2019), 49–51; Tech. Phys. Lett., 45:4 (2019), 356–358
Citation in format AMSBIB
\Bibitem{UmiTasAll19}
\by B.~E.~Umirzakov, D.~A.~Tashmukhamedova, G.~Kh.~Allayarova, J.~Sh.~Sodikjanov
\paper The effect of the formation of silicides on the resistivity of silicon
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 7
\pages 49--51
\mathnet{http://mi.mathnet.ru/pjtf5484}
\crossref{https://doi.org/10.21883/PJTF.2019.07.47539.17650}
\elib{https://elibrary.ru/item.asp?id=37645698}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 4
\pages 356--358
\crossref{https://doi.org/10.1134/S1063785019040175}
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  • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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