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Publications in Math-Net.Ru |
Citations |
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1988 |
| 1. |
A. É. Bochkarev, L. M. Dolginov, A. E. Drakin, P. G. Eliseev, B. N. Sverdlov, “Continuous-wave lasing at room temperature in InGaSbAs/GaAlSbAs injection heterostructures emitting in the spectral range 2.2–2.4 μm”, Kvantovaya Elektronika, 15:11 (1988), 2171–2172  [Sov J Quantum Electron, 18:11 (1988), 1362–1363  ] |
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1986 |
| 2. |
A. É. Bochkarev, L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, “Injection InGaSbAs laser emitting at 2.4<i>μ</i> (300K)”, Kvantovaya Elektronika, 13:10 (1986), 2119–2120 [Sov J Quantum Electron, 16:10 (1986), 1397 ] |
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1985 |
| 3. |
A. É. Bochkarev, L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, B. N. Sverdlov, “Injection InGaSbAs lasers emitting radiation of wavelengths 1.9–2.3μ at room temperature”, Kvantovaya Elektronika, 12:6 (1985), 1309–1311 [Sov J Quantum Electron, 15:6 (1985), 869–870 ] |
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1984 |
| 4. |
A. G. Belov, A. I. Belogorokhov, A. É. Bochkarev, L. M. Dolginov, L. V. Druzhinina, G. M. Zinger, M. A. Il'in, P. Yu. Karasev, M. G. Mil'vidskii, D. A. Rzaev, A. I. Ryskin, “Optical properties of $\mathrm{Ga}_{x}\mathrm{In}_{1-x}\mathrm{As}_{y}\mathrm{Sb}_{1-y}$”, Fizika Tverdogo Tela, 26:1 (1984), 145–150 |
| 5. |
V. P. Avdeeva, V. V. Bezotosnyi, M. G. Vasil'ev, L. M. Dolginov, A. E. Drakin, V. P. Duraev, P. G. Eliseev, N. V. Mal'kova, M. G. Mil'vidskii, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko, “LOW-THRESHOLD INJECTION-LASERS BASED ON THICK GAINPAS/INP (1.2-1.6 MKM)
HETEROSTRUCTURES”, Zhurnal Tekhnicheskoi Fiziki, 54:3 (1984), 551–557 |
| 6. |
L. M. Dolginov, A. E. Drakin, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko, “Injection InGaAsP/lnP lasers with a threshold current density of 0.5 kA/cm<sup>2</sup> at 300 К”, Kvantovaya Elektronika, 11:4 (1984), 645–646 [Sov J Quantum Electron, 14:4 (1984), 439–441 ] |
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| 7. |
M. G. Vasil'ev, L. M. Dolginov, A. E. Drakin, A. V. Ivanov, P. G. Eliseev, V. P. Konyaev, B. N. Sverdlov, V. A. Skripkin, V. I. Shveĭkin, E. G. Shevchenko, A. A. Shelyakin, G. V. Shepekina, “Three-layer waveguide InGaAsP/lnP injection lasers”, Kvantovaya Elektronika, 11:3 (1984), 631–633 [Sov J Quantum Electron, 14:3 (1984), 431–432 ] |
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1982 |
| 8. |
L. M. Dolginov, V. P. Duraev, P. G. Eliseev, E. T. Nedelin, B. N. Sverdlov, V. I. Shveĭkin, E. G. Shevchenko, “Temperature dependences of the emission characteristics of GaInPAs/InP injection lasers”, Kvantovaya Elektronika, 9:9 (1982), 1902–1904 [Sov J Quantum Electron, 12:9 (1982), 1237–1238 ] |
| 9. |
L. M. Dolginov, A. E. Drakin, V. P. Duraev, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko, “Continuous-wave injection lasers emitting in the 1.5–1.6 μ range”, Kvantovaya Elektronika, 9:9 (1982), 1749 [Sov J Quantum Electron, 12:9 (1982), 1127 ] |
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1981 |
| 10. |
V. V. Bezotosnyi, L. M. Dolginov, P. G. Eliseev, B. N. Sverdlov, E. G. Shevchenko, G. V. Shepekina, “Mode composition of radiation from mesastripe GalnPAs–lnP heterojunction lasers buried in InP or GalnPAs”, Kvantovaya Elektronika, 8:9 (1981), 1994–1996 [Sov J Quantum Electron, 11:9 (1981), 1208–1209 ] |
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1980 |
| 11. |
V. V. Bezotosnyi, L. M. Dolginov, P. G. Eliseev, M. G. Mil'vidskii, B. N. Sverdlov, E. G. Shevchenko, G. V. Shepekina, “Buried mesastripe cw room-temperature $GaInPAs/InP$ heterojunction lasers in the $1,24-1,28\mu m$ wavelength range”, Kvantovaya Elektronika, 7:9 (1980), 1990–1992 [Sov J Quantum Electron, 10:9 (1980), 1146–1148 ] |
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| 12. |
Ya. A. Aarik, L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, P. A. Lyuk, B. N. Sverdlov, V. A. Skripkin, L. V. Friedentkhal', “Properties of AIGaAsSb–GaSb heterojunction injection lasers in the 1.4–1.8 $\mu m$ wavelength range”, Kvantovaya Elektronika, 7:1 (1980), 91–96 [Sov J Quantum Electron, 10:1 (1980), 50–53 ] |
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1978 |
| 13. |
L. M. Dolginov, A. E. Drakin, P. G. Eliseev, T. V. Berdnikova, M. G. Mil'vidskii, V. P. Orlov, Yu. K. Panteleev, B. N. Sverdlov, E. G. Shevchenko, “High-efficiency GaInPAs/InP light-emitting diodes”, Kvantovaya Elektronika, 5:11 (1978), 2488–2489 [Sov J Quantum Electron, 8:11 (1978), 1404–1405] |
| 14. |
L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, A. N. Lapshin, M. G. Mil'vidskii, B. N. Sverdlov, “Injection heterolaser based on InGaAsSb four-component solid solution”, Kvantovaya Elektronika, 5:3 (1978), 703–704 [Sov J Quantum Electron, 8:3 (1978), 416] |
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| 15. |
L. M. Dolginov, L. V. Druzhinina, I. V. Kryukova, A. N. Lapshin, V. I. Leskovich, E. V. Matveenko, M. G. Mil'vidskii, “Efficient room-temperature stimulated emission from a Ga<sub><i>x</i></sub>ln<sub>1–<i>x</i></sub>As<sub><i>y</i></sub>Sb<sub>1–<i>y</i></sub> semiconductor laser in the spectral range 1.8–2.4 μ”, Kvantovaya Elektronika, 5:1 (1978), 126–128 [Sov J Quantum Electron, 8:1 (1978), 66–67] |
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1977 |
| 16. |
O. I. Davarashvili, L. M. Dolginov, P. G. Eliseev, I. I. Zasavitskii, A. P. Shotov, “Multicomponent solid solutions of IV-VI compounds”, Kvantovaya Elektronika, 4:4 (1977), 904–907 [Sov J Quantum Electron, 7:4 (1977), 508–510] |
2
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1976 |
| 17. |
L. M. Dolginov, L. V. Druzhinina, E. M. Krasavina, I. V. Kryukova, E. V. Matveenko, Yu. V. Petrushenko, S. P. Prokof'eva, V. P. Tsyganov, E. G. Shevchenko, “Spontaneous and stimulated emission from Ga<sub><i>x</i></sub>In<sub>1<i>–x</i></sub>As, GaAs<sub><i>x</i></sub>Sb<sub>1<i>–x</i></sub>, and Ga<sub><i>x</i></sub>In<sub>1<i>–x</i></sub>As<sub>1<i>–y</i></sub>P<sub><i>y</i></sub> solid solutions”, Kvantovaya Elektronika, 3:11 (1976), 2490–2494 [Sov J Quantum Electron, 6:11 (1976), 1367–1369] |
| 18. |
L. M. Dolginov, P. G. Eliseev, M. G. Mil'vidskii, “Multicomponent semiconductor solid solutions and their laser applications (review)”, Kvantovaya Elektronika, 3:7 (1976), 1381–1393 [Sov J Quantum Electron, 6:7 (1976), 747–753] |
11
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| 19. |
R. Altynbaev, L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, I. Ismailov, N. Shokhudzhaev, “Investigation of Al<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>As injection heterolasers emitting visible radiation”, Kvantovaya Elektronika, 3:5 (1976), 1080–1084 [Sov J Quantum Electron, 6:5 (1976), 577–579] |
| 20. |
L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, I. V. Kryukova, V. I. Leskovich, M. G. Mil'vidskii, B. N. Sverdlov, V. A. Chapnin, “Luminescence and stimulated emission from Ga<sub><i>x</i></sub>ln<sub><i>1–x</i></sub>As<sub><i>y</i></sub>Sb<sub><i>1–y</i></sub>”, Kvantovaya Elektronika, 3:4 (1976), 932–934 [Sov J Quantum Electron, 6:4 (1976), 507–508] |
5
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| 21. |
L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, M. G. Mil'vidskii, B. N. Sverdlov, “New uncooled injection heterolaser emitting in the 1.5–1.8 μ range”, Kvantovaya Elektronika, 3:2 (1976), 465–466 [Sov J Quantum Electron, 6:2 (1976), 257] |
11
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1974 |
| 22. |
A. P. Bogatov, L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, B. N. Sverdlov, E. G. Shevchenko, “Heterojunction lasers made of Ga<sub><i>x</i></sub>In<sub>1–<i>x</i></sub>As<sub><i>y</i></sub>P<sub>1–<i>y</i></sub> and Al<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>Sb<sub><i>y</i></sub>As<sub>1–<i>y</i></sub> solid solutions”, Kvantovaya Elektronika, 1:10 (1974), 2294–2295 [Sov J Quantum Electron, 4:10 (1975), 1281] |
66
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| 23. |
L. M. Dolginov, L. V. Druzhinina, I. V. Kryukova, Yu. V. Petrushenko, B. M. Stepanov, “Parameters of electron-beam-pumped <nobr>Al<sub>x</sub>Ga<sub>1–x</sub>As</nobr> lasers in the visible part of the spectrum”, Kvantovaya Elektronika, 1:1 (1974), 178–180 [Sov J Quantum Electron, 4:1 (1974), 104–105] |
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1988 |
| 24. |
L. M. Dolginov, “Лозовский В. Н., Лунин Л. С., Попов В. П. Зонная перекристаллизация градиентом температуры полупроводниковых материалов. М.: Металлургия, 1987. 233 с.”, Fizika i Tekhnika Poluprovodnikov, 22:7 (1988), 1334–1335 |
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