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Kvantovaya Elektronika, 1978, Volume 5, Number 1, Pages 126–128 (Mi qe8401)  

This article is cited in 2 scientific papers (total in 2 papers)

Brief Communications

Efficient room-temperature stimulated emission from a Gaxln1–xAsySb1–y semiconductor laser in the spectral range 1.8–2.4 μ

L. M. Dolginov, L. V. Druzhinina, I. V. Kryukova, A. N. Lapshin, V. I. Leskovich, E. V. Matveenko, M. G. Mil'vidskii
Full-text PDF (513 kB) Citations (2)
Abstract: The Gaxln1–xAsySb1–y solid-solution system was found to emit stimulated radiation in the wavelength range 1.86–2.2 μ (80°K) and 2.06–2.36 μ (300°K). A study was made of the principal characteristics of electron-beam-pumped lasers utilizing these solid solutions. The maximum output power was 110 W at 80°K and 38 W at 300°K; the corresponding differential efficiencies were 5 and 3%, respectively.
Received: 07.01.1977
English version:
Soviet Journal of Quantum Electronics, 1978, Volume 8, Issue 1, Pages 66–67
DOI: https://doi.org/10.1070/QE1978v008n01ABEH008401
Document Type: Article
UDC: 621.373.826
PACS: 42.55.Px
Language: Russian


Citation: L. M. Dolginov, L. V. Druzhinina, I. V. Kryukova, A. N. Lapshin, V. I. Leskovich, E. V. Matveenko, M. G. Mil'vidskii, “Efficient room-temperature stimulated emission from a Gaxln1–xAsySb1–y semiconductor laser in the spectral range 1.8–2.4 μ”, Kvantovaya Elektronika, 5:1 (1978), 126–128 [Sov J Quantum Electron, 8:1 (1978), 66–67]
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  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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