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Yakimov, Andrei Innokent'evich
Statistics Math-Net.Ru
Total publications: 28
Scientific articles: 28

Number of views:
This page:169
Abstract pages:4262
Full texts:1495
References:753
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https://www.mathnet.ru/eng/person56414
List of publications on Google Scholar
List of publications on ZentralBlatt

Publications in Math-Net.Ru Citations
2023
1. A. I. Yakimov, V. V. Kirienko, A. V. Dvurechenskii, D. E. Utkin, “Manifestation of “slow” light in the photocurrent spectra of Ge/Si quantum dot layers combined with a photonic crystal”, Pis'ma v Zh. Èksper. Teoret. Fiz., 118:4 (2023),  240–244  mathnet; JETP Letters, 118:4 (2023), 244–248
2021
2. A. I. Yakimov, A. A. Bloshkin, V. V. Kirienko, A. V. Dvurechenskii, D. E. Utkin, “Increase in the photocurrent in layers of Ge/Si quantum dots by modes of a two-dimensional photonic crystal”, Pis'ma v Zh. Èksper. Teoret. Fiz., 113:8 (2021),  501–506  mathnet  elib; JETP Letters, 113:8 (2021), 498–503  isi  scopus 4
3. A. I. Yakimov, V. V. Kirienko, A. A. Bloshkin, A. V. Dvurechenskii, D. E. Utkin, “Effect of adhesive layers on photocurrent enhancement in near-infrared quantum-dot photodetectors coupled with metal-nanodisk arrays”, Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  596–601  mathnet  elib; Semiconductors, 55:8 (2021), 654–659
2019
4. A. I. Yakimov, A. A. Bloshkin, A. V. Dvurechenskii, “Plasmonic field enhancement by metallic subwave lattices on silicon in the near-infrared range”, Pis'ma v Zh. Èksper. Teoret. Fiz., 110:6 (2019),  393–399  mathnet  elib; JETP Letters, 110:6 (2019), 411–416  isi  scopus 4
5. A. A. Bloshkin, A. I. Yakimov, A. V. Dvurechenskii, “Plasmon enhancement of the electric field in mid-infrared Ge/Si quantum-dot photodetectors with different thicknesses of the active region”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  206–210  mathnet  elib; Semiconductors, 53:2 (2019), 195–199 1
2018
6. A. I. Yakimov, V. V. Kirienko, A. V. Dvurechenskii, “Localization of surface plasmon waves in hybrid photodetectors with subwavelength metallic arrays”, Pis'ma v Zh. Èksper. Teoret. Fiz., 108:6 (2018),  399–403  mathnet  elib; JETP Letters, 108:6 (2018), 374–378  isi  scopus
2017
7. A. I. Yakimov, V. V. Kirienko, V. A. Armbrister, A. V. Dvurechenskii, “Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:7 (2017),  419–423  mathnet  elib; JETP Letters, 105:7 (2017), 426–429  isi  scopus 1
8. A. A. Bloshkin, A. I. Yakimov, V. A. Timofeev, A. R. Tuktamyshev, A. I. Nikiforov, V. V. Murashov, “Valence-band offsets in strained SiGeSn/Si layers with different tin contents”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  342–347  mathnet  elib; Semiconductors, 51:3 (2017), 329–334 2
2016
9. A. I. Yakimov, V. V. Kirienko, V. A. Armbrister, A. V. Dvurechenskii, “Enhancement of the hole photocurrent in layers of Ge/Si quantum dots with abrupt heterointerfaces”, Pis'ma v Zh. Èksper. Teoret. Fiz., 104:7 (2016),  507–511  mathnet  elib; JETP Letters, 104:7 (2016), 479–482  isi  scopus 1
2015
10. A. I. Yakimov, V. V. Kirienko, A. A. Bloshkin, V. A. Armbrister, A. V. Dvurechenskii, “Suppression of hole relaxation in small-sized Ge/Si quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 102:9 (2015),  678–682  mathnet  elib; JETP Letters, 102:9 (2015), 594–598  isi  scopus 7
11. A. I. Yakimov, V. V. Kirienko, A. A. Bloshkin, V. A. Armbrister, A. V. Dvurechenskii, “Strain-induced localization of electrons in layers of the second-type Ge/Si quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 101:11 (2015),  846–850  mathnet  elib; JETP Letters, 101:11 (2015), 750–753  isi  elib  scopus 9
2014
12. A. I. Yakimov, V. V. Kirienko, V. A. Timofeev, A. V. Dvurechenskii, “Bidirectional photocurrent of holes in layers of Ge/Si quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:2 (2014),  99–103  mathnet  elib; JETP Letters, 100:2 (2014), 91–94  isi  elib  scopus 3
2013
13. A. I. Yakimov, V. V. Kirienko, V. A. Timofeev, A. I. Nikiforov, “Intraband optical transitions of holes in strained SiGe quantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 97:3 (2013),  180–184  mathnet  elib; JETP Letters, 97:3 (2013), 159–162  isi  elib  scopus 3
2012
14. A. I. Yakimov, “Electronic structure of double Ge quantum dots in Si”, Pis'ma v Zh. Èksper. Teoret. Fiz., 96:1 (2012),  77–86  mathnet  elib; JETP Letters, 96:1 (2012), 75–83  isi  elib  scopus
2011
15. A. I. Yakimov, V. A. Timofeev, A. I. Nikiforov, A. V. Dvurechenskii, “Antibonding ground state of holes in double vertically coupled Ge/Si quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:10 (2011),  806–810  mathnet  elib; JETP Letters, 94:10 (2011), 744–747  isi  elib  scopus 9
2010
16. A. I. Yakimov, A. A. Bloshkin, A. V. Dvurechenskii, “Double-occupancy probability and entanglement of two holes in double Ge/Si quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 92:1 (2010),  43–46  mathnet; JETP Letters, 92:1 (2010), 36–39  isi  scopus 2
2009
17. A. I. Yakimov, A. A. Bloshkin, A. V. Dvurechenskii, “Excitons in Ge/Si double quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 90:8 (2009),  621–625  mathnet; JETP Letters, 90:8 (2009), 569–573  isi  scopus 15
2007
18. A. I. Yakimov, A. I. Nikiforov, A. V. Dvurechenskii, “Bonding state of a hole in Ge/Si double quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 86:7 (2007),  549–552  mathnet; JETP Letters, 86:7 (2007), 478–481  isi  scopus 6
19. A. I. Yakimov, G. Yu. Mikhalev, A. V. Nenashev, A. V. Dvurechenskii, “Hole states in artificial molecules formed by vertically coupled Ge/Si quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 85:9 (2007),  527–532  mathnet; JETP Letters, 85:9 (2007), 429–433  isi  scopus 7
2006
20. A. I. Yakimov, A. V. Dvurechenskii, A. A. Bloshkin, A. V. Nenashev, “Binding of electron states in multilayer strained Ge/Si heterostructures with type-II quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 83:4 (2006),  189–194  mathnet; JETP Letters, 83:4 (2006), 156–161  isi  scopus 12
2004
21. A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov, G. Yu. Mikhalev, “The Meyer – Neldel rule in the processes of thermal emission and hole capture in Ge/Si quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 80:5 (2004),  367–371  mathnet; JETP Letters, 80:5 (2004), 321–325  scopus 9
2003
22. N. P. Stepina, A. I. Yakimov, A. V. Nenashev, A. V. Dvurechenskii, A. I. Nikiforov, “Hopping photoconduction and its long-time kinetics in a heterosystem with Ge quantum dots in Si”, Pis'ma v Zh. Èksper. Teoret. Fiz., 78:9 (2003),  1077–1081  mathnet; JETP Letters, 78:9 (2003), 587–591  scopus 2
23. A. I. Yakimov, A. V. Nenashev, A. V. Dvurechenskii, M. N. Timonova, “Many-electron Coulomb correlations in hopping transport along layers of quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 78:4 (2003),  276–280  mathnet; JETP Letters, 78:4 (2003), 241–245  scopus 3
24. A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov, A. A. Bloshkin, “Phononless hopping conduction in two-dimensional layers of quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 77:7 (2003),  445–449  mathnet; JETP Letters, 77:7 (2003), 376–380  scopus 30
2002
25. A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov, S. V. Chaikovskii, “Barrier height and tunneling current in Schottky diodes with embedded layers of quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 75:2 (2002),  113–117  mathnet; JETP Letters, 75:2 (2002), 102–106  scopus 4
2001
26. A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov, “Spatial separation of electrons in Ge/Si(001) heterostructures with quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 73:10 (2001),  598–600  mathnet; JETP Letters, 73:10 (2001), 529–531  scopus 23
27. A. V. Dvurechenskii, A. I. Yakimov, “Quantum dot Ge/Si heterostructures”, UFN, 171:12 (2001),  1371–1373  mathnet; Phys. Usp., 44:12 (2001), 1304–1307  isi 8
1988
28. A. V. Dvurechenskii, V. A. Dravin, A. I. Yakimov, “Hopping conduction in intermediately doped semiconductors”, Fizika Tverdogo Tela, 30:2 (1988),  401–406  mathnet

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