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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2013, Volume 97, Issue 3, Pages 180–184
DOI: https://doi.org/10.7868/S0370274X13030090 (Mi jetpl3348) 		 
This article is cited in 3 scientific papers (total in 3 papers)

CONDENSED MATTER

Intraband optical transitions of holes in strained SiGe quantum wells

A. I. Yakimov, V. V. Kirienko, V. A. Timofeev, A. I. Nikiforov

A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
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DOI: https://doi.org/10.7868/S0370274X13030090
Abstract: Optical absorption spectra of polarized infrared radiation in $p$-type SiGe quantum-well structures have been investigated. Three types of structures with different magnitudes and signs of biaxial elastic strains have been studied. The light absorption factor has been found to double in the region of interband transitions under the in-plane tensile strain of the quantum-well heterojunction. The results are attributed to a change in the order of light- and heavy-hole bands caused by the tensile strain and to the formation of the ground state of charge carriers in the light-hole band.
Received: 09.01.2013
English version:
Journal of Experimental and Theoretical Physics Letters, 2013, Volume 97, Issue 3, Pages 159–162
DOI: https://doi.org/10.1134/S0021364013030119
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. I. Yakimov, V. V. Kirienko, V. A. Timofeev, A. I. Nikiforov, “Intraband optical transitions of holes in strained SiGe quantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 97:3 (2013), 180–184; JETP Letters, 97:3 (2013), 159–162
Citation in format AMSBIB
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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