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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2010, Volume 92, Issue 1, Pages 43–46 (Mi jetpl763)  

This article is cited in 2 scientific papers (total in 2 papers)

CONDENSED MATTER

Double-occupancy probability and entanglement of two holes in double Ge/Si quantum dots

A. I. Yakimov, A. A. Bloshkin, A. V. Dvurechenskii

Rzhanov Institute of Semiconductor Physics, Siberian Branch RAS
Full-text PDF (628 kB) Citations (2)
References:
Abstract: We have calculated the exchange energy, double occupation probability of the lowest singlet state, and degree of entanglement of two holes in vertically coupled double Ge/Si quantum dots. We determined the conditions on which the exchange coupling is large enough for a fast swap operation in quantum computation and the double-occupancy probability is still low, thus maximizing the entanglement for a small computation error. We found that both the degree of entanglement and double-occupancy probability for quantum dots with different dot size collapse onto universal, size independent curves when plotted as a function of singlet-triplet splitting.
Received: 11.05.2010
English version:
Journal of Experimental and Theoretical Physics Letters, 2010, Volume 92, Issue 1, Pages 36–39
DOI: https://doi.org/10.1134/S0021364010130072
Bibliographic databases:
Document Type: Article
Language: English
Citation: A. I. Yakimov, A. A. Bloshkin, A. V. Dvurechenskii, “Double-occupancy probability and entanglement of two holes in double Ge/Si quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 92:1 (2010), 43–46; JETP Letters, 92:1 (2010), 36–39
Citation in format AMSBIB
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\paper Double-occupancy probability and entanglement of two holes in double Ge/Si quantum dots
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\yr 2010
\vol 92
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\pages 43--46
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\jour JETP Letters
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\pages 36--39
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  • https://www.mathnet.ru/eng/jetpl/v92/i1/p43
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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