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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2010, Volume 92, Issue 1, Pages 43–46
(Mi jetpl763)
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This article is cited in 2 scientific papers (total in 2 papers)
CONDENSED MATTER
Double-occupancy probability and entanglement of two holes in double Ge/Si quantum dots
A. I. Yakimov, A. A. Bloshkin, A. V. Dvurechenskii Rzhanov Institute of Semiconductor Physics, Siberian
Branch RAS
Abstract:
We have calculated the exchange energy, double occupation probability of the lowest singlet state, and degree of entanglement of two holes in vertically coupled double Ge/Si quantum dots. We determined the conditions on which the exchange coupling is large enough for a fast swap operation in quantum computation and the double-occupancy probability is still low, thus maximizing the entanglement for a small computation error. We found that both the degree of entanglement and double-occupancy probability for quantum dots with different dot size collapse onto universal, size independent curves when plotted as a function of singlet-triplet splitting.
Received: 11.05.2010
Citation:
A. I. Yakimov, A. A. Bloshkin, A. V. Dvurechenskii, “Double-occupancy probability and entanglement of two holes in double Ge/Si quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 92:1 (2010), 43–46; JETP Letters, 92:1 (2010), 36–39
Linking options:
https://www.mathnet.ru/eng/jetpl763 https://www.mathnet.ru/eng/jetpl/v92/i1/p43
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