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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2021, Volume 113, Issue 8, Pages 501–506 (Mi jetpl6404)  

This article is cited in 4 scientific papers (total in 4 papers)

OPTICS AND NUCLEAR PHYSICS

Increase in the photocurrent in layers of Ge/Si quantum dots by modes of a two-dimensional photonic crystal

A. I. Yakimovab, A. A. Bloshkinbc, V. V. Kirienkob, A. V. Dvurechenskiibc, D. E. Utkincb

a Tomsk State University, Tomsk, 634050 Russia
b Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia
c Novosibirsk State University, Novosibirsk, 630090 Russia
References:
Abstract: It has been found that the introduction of layers of Ge/Si quantum dots in a two-dimensional photonic crystal leads to a strong (up to a factor of 5) increase in the photocurrent in the near infrared range. The photonic crystal is a regular triangular array of holes in a Si/Ge/Si heterostructure grown on a silicon-on-insulator substrate. The results have been explained by the excitation of planar modes of the photonic crystal, which propagate along the Ge/Si layers and effectively interact with interband transitions in quantum dots, by the incident light wave.
Funding agency Grant number
Ministry of Science and Higher Education of the Russian Federation 075-15-2020-797 (13.1902.21.0024)
This study was supported by the Ministry of Science and Higher Education of the Russian Federation (project no.В 075-15-2020-797 (13.1902.21.0024)).
Received: 15.03.2021
Revised: 15.03.2021
Accepted: 17.03.2021
English version:
Journal of Experimental and Theoretical Physics Letters, 2021, Volume 113, Issue 8, Pages 498–503
DOI: https://doi.org/10.1134/S0021364021080129
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. I. Yakimov, A. A. Bloshkin, V. V. Kirienko, A. V. Dvurechenskii, D. E. Utkin, “Increase in the photocurrent in layers of Ge/Si quantum dots by modes of a two-dimensional photonic crystal”, Pis'ma v Zh. Èksper. Teoret. Fiz., 113:8 (2021), 501–506; JETP Letters, 113:8 (2021), 498–503
Citation in format AMSBIB
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\by A.~I.~Yakimov, A.~A.~Bloshkin, V.~V.~Kirienko, A.~V.~Dvurechenskii, D.~E.~Utkin
\paper Increase in the photocurrent in layers of Ge/Si quantum dots by modes of a two-dimensional photonic crystal
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2021
\vol 113
\issue 8
\pages 501--506
\mathnet{http://mi.mathnet.ru/jetpl6404}
\elib{https://elibrary.ru/item.asp?id=46887345}
\transl
\jour JETP Letters
\yr 2021
\vol 113
\issue 8
\pages 498--503
\crossref{https://doi.org/10.1134/S0021364021080129}
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  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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