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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2007, Volume 85, Issue 9, Pages 527–532 (Mi jetpl1025)  

This article is cited in 7 scientific papers (total in 7 papers)

CONDENSED MATTER

Hole states in artificial molecules formed by vertically coupled Ge/Si quantum dots

A. I. Yakimov, G. Yu. Mikhalev, A. V. Nenashev, A. V. Dvurechenskii

A. V. Rzhanov Institute of Semiconductor Physics of SB RAS
Full-text PDF (922 kB) Citations (7)
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Abstract: In the tight binding approximation, the spatial configuration of the ground state and the binding energy of a hole in a “diatomic” artificial molecule formed by vertically coupled Ge/Si(001) quantum dots are studied. The inhomogeneous spatial distribution of elastic strain arising in the medium due to the lattice mismatch between Ge and Si is taken into account. The strain is calculated using the valence-force-field model with a Keating interatomic potential. The formation of the hole states is shown to be determined by the competition of two processes: the appearance of a common hole due to the overlapping of “atomic” wavefunctions and the appearance of asymmetry in the potential energy of a hole in the two quantum dots because of the superposition of the elastic strain fields from the vertically aligned Ge nanoclusters. When the thickness of the Si layer separating the Ge dots (t Si) is greater than 2.3 nm, the binding energy of a hole in the ground state of the two-dot system proves to be lower than the ionization energy of a single quantum dot because of the partial elastic stress relaxation due to the coupling of the quantum dots and due to the decrease in the depth of the potential well for holes. For the values of the parameter t Si, an intermediate region is revealed, where the covalent molecular bond fails and the hole is localized in one of the two quantum dots, namely, in the dot characterized by the highest strain values.
Received: 15.03.2007
English version:
Journal of Experimental and Theoretical Physics Letters, 2007, Volume 85, Issue 9, Pages 429–433
DOI: https://doi.org/10.1134/S0021364007090044
Bibliographic databases:
Document Type: Article
PACS: 73.20.Mf, 73.50.Pz
Language: Russian


Citation: A. I. Yakimov, G. Yu. Mikhalev, A. V. Nenashev, A. V. Dvurechenskii, “Hole states in artificial molecules formed by vertically coupled Ge/Si quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 85:9 (2007), 527–532; JETP Letters, 85:9 (2007), 429–433
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