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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2017, Volume 105, Issue 7, Pages 419–423
DOI: https://doi.org/10.7868/S0370274X17070025
(Mi jetpl5229)
 

This article is cited in 1 scientific paper (total in 1 paper)

CONDENSED MATTER

Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots

A. I. Yakimovab, V. V. Kirienkoa, V. A. Armbristera, A. V. Dvurechenskiiac

a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
b Tomsk State University, Tomsk, Russia
c Novosibirsk State University, Novosibirsk, Russia
Full-text PDF (441 kB) Citations (1)
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Abstract: It is found that the integration of Ge/Si heterostructures containing layers of Ge quantum dots with twodimensional regular lattices of subwave holes in a gold film on the surface of a semiconductor leads to the multiple (to 20 times) enhancement of the hole photocurrent in narrow wavelength regions of the mid-infrared range. The results are explained by the light wave excitation of the surface plasmon–polaritons at the metal–semiconductor interface effectively interacting with intraband transitions of holes in quantum dots.
Funding agency Grant number
Russian Foundation for Basic Research 16-29-03024_îôè_ì
Received: 13.02.2017
Revised: 27.02.2017
English version:
Journal of Experimental and Theoretical Physics Letters, 2017, Volume 105, Issue 7, Pages 426–429
DOI: https://doi.org/10.1134/S002136401707013X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. I. Yakimov, V. V. Kirienko, V. A. Armbrister, A. V. Dvurechenskii, “Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:7 (2017), 419–423; JETP Letters, 105:7 (2017), 426–429
Citation in format AMSBIB
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\paper Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots
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