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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2014, Volume 100, Issue 2, Pages 99–103
DOI: https://doi.org/10.7868/S0370274X14140057 (Mi jetpl3782) 		 
This article is cited in 3 scientific papers (total in 3 papers)

CONDENSED MATTER

Bidirectional photocurrent of holes in layers of Ge/Si quantum dots

A. I. Yakimovab, V. V. Kirienkob, V. A. Timofeevb, A. V. Dvurechenskiib

a Tomsk State University
b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Full-text PDF (458 kB) Citations (3)
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DOI: https://doi.org/10.7868/S0370274X14140057
Abstract: Spectra of the photocurrent of holes in $\delta$-doped Si layers with Ge quantum dots in weak external electric fields have been studied. It has been established that the photocurrent of the holes in the photovoltaic mode changes its sign with the increase in the impurity concentration in the $\delta$ layers. It has been found that there is a voltage range in the vicinity of the zero bias in which the direction of the photocurrent is determined by the wavelength of the exciting radiation.
Received: 10.06.2014
English version:
Journal of Experimental and Theoretical Physics Letters, 2014, Volume 100, Issue 2, Pages 91–94
DOI: https://doi.org/10.1134/S0021364014140136
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. I. Yakimov, V. V. Kirienko, V. A. Timofeev, A. V. Dvurechenskii, “Bidirectional photocurrent of holes in layers of Ge/Si quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:2 (2014), 99–103; JETP Letters, 100:2 (2014), 91–94
Citation in format AMSBIB
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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