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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2001, Volume 73, Issue 10, Pages 598–600
(Mi jetpl4399)
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This article is cited in 23 scientific papers (total in 23 papers)
CONDENSED MATTER
Spatial separation of electrons in Ge/Si(001) heterostructures with quantum dots
A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Abstract:
It is shown experimentally that the excitation of interband optical transitions in arrays of Ge/$n$-Si(001) quantum dots leads to a decrease in the concentration of electrons in the conduction band. The phenomenon observed is due to the formation of negatively charged exciton complexes in Ge islands and represents the first experimental confirmation of the spatial separation of electrons in the silicon matrix surrounding the islands.
Received: 10.04.2001
Citation:
A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov, “Spatial separation of electrons in Ge/Si(001) heterostructures with quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 73:10 (2001), 598–600; JETP Letters, 73:10 (2001), 529–531
Linking options:
https://www.mathnet.ru/eng/jetpl4399 https://www.mathnet.ru/eng/jetpl/v73/i10/p598
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