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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2002, Volume 75, Issue 2, Pages 113–117
(Mi jetpl3033)
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This article is cited in 4 scientific papers (total in 4 papers)
CONDENSED MATTER
Barrier height and tunneling current in Schottky diodes with embedded layers of quantum dots
A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov, S. V. Chaikovskii Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Abstract:
Electrical characteristics of silicon Schottky diodes containing Ge quantum dot (QD) arrays are investigated. It has been found that the potential barrier height at the metal-semiconductor contact can be controlled by introducing dense QD layers, which is a consequence of the formation of a planar electrostatic potential of charged QDs. When the applied voltage is varied, the ideality factors of Schottky barriers exhibit oscillations due to the tunneling of holes through discrete levels in quantum dots.
Received: 20.12.2001
Citation:
A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov, S. V. Chaikovskii, “Barrier height and tunneling current in Schottky diodes with embedded layers of quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 75:2 (2002), 113–117; JETP Letters, 75:2 (2002), 102–106
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https://www.mathnet.ru/eng/jetpl3033 https://www.mathnet.ru/eng/jetpl/v75/i2/p113
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Abstract page: | 165 | Full-text PDF : | 56 | References: | 21 |
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