Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki
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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2002, Volume 75, Issue 2, Pages 113–117 (Mi jetpl3033)  
This article is cited in 4 scientific papers (total in 4 papers)

CONDENSED MATTER

Barrier height and tunneling current in Schottky diodes with embedded layers of quantum dots

A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov, S. V. Chaikovskii

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Full-text PDF (350 kB) Citations (4)
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Abstract: Electrical characteristics of silicon Schottky diodes containing Ge quantum dot (QD) arrays are investigated. It has been found that the potential barrier height at the metal-semiconductor contact can be controlled by introducing dense QD layers, which is a consequence of the formation of a planar electrostatic potential of charged QDs. When the applied voltage is varied, the ideality factors of Schottky barriers exhibit oscillations due to the tunneling of holes through discrete levels in quantum dots.
Received: 20.12.2001
English version:
Journal of Experimental and Theoretical Physics Letters, 2002, Volume 75, Issue 2, Pages 102–106
DOI: https://doi.org/10.1134/1.1466486
Bibliographic databases:
Document Type: Article
PACS: 73.20.Mf, 73.50.Pz
Language: Russian
Citation: A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov, S. V. Chaikovskii, “Barrier height and tunneling current in Schottky diodes with embedded layers of quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 75:2 (2002), 113–117; JETP Letters, 75:2 (2002), 102–106
Citation in format AMSBIB
\Bibitem{YakDvuNik02}
\by A.~I.~Yakimov, A.~V.~Dvurechenskii, A.~I.~Nikiforov, S.~V.~Chaikovskii
\paper Barrier height and tunneling current in Schottky diodes with embedded layers of quantum dots
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2002
\vol 75
\issue 2
\pages 113--117
\mathnet{http://mi.mathnet.ru/jetpl3033}
\transl
\jour JETP Letters
\yr 2002
\vol 75
\issue 2
\pages 102--106
\crossref{https://doi.org/10.1134/1.1466486}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-0038890114}
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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