Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Pis'ma v Zh. Èksper. Teoret. Fiz.:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2011, Volume 94, Issue 10, Pages 806–810 (Mi jetpl2384)  
This article is cited in 9 scientific papers (total in 9 papers)

CONDENSED MATTER

Antibonding ground state of holes in double vertically coupled Ge/Si quantum dots

A. I. Yakimov, V. A. Timofeev, A. I. Nikiforov, A. V. Dvurechenskii

A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
Full-text PDF (227 kB) Citations (9)
References:
PDF
HTML
Abstract: The existence of the antibonding ground state of holes in artificial molecules, which are formed by the vertically coupled Ge/Si quantum dots, has been proved experimentally. This phenomenon is absent in natural molecules and double quantum dots containing electrons. It is a consequence of spin-orbit interaction and deformation effects in the valence band of vertically aligned quantum dots.
Received: 13.11.2011
Revised: 21.10.2011
English version:
Journal of Experimental and Theoretical Physics Letters, 2011, Volume 94, Issue 10, Pages 744–747
DOI: https://doi.org/10.1134/S0021364011220127
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. I. Yakimov, V. A. Timofeev, A. I. Nikiforov, A. V. Dvurechenskii, “Antibonding ground state of holes in double vertically coupled Ge/Si quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:10 (2011), 806–810; JETP Letters, 94:10 (2011), 744–747
Citation in format AMSBIB
\Bibitem{YakTimNik11}
\by A.~I.~Yakimov, V.~A.~Timofeev, A.~I.~Nikiforov, A.~V.~Dvurechenskii
\paper Antibonding ground state of holes in double vertically coupled Ge/Si quantum dots
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2011
\vol 94
\issue 10
\pages 806--810
\mathnet{http://mi.mathnet.ru/jetpl2384}
\elib{https://elibrary.ru/item.asp?id=17239363}
\transl
\jour JETP Letters
\yr 2011
\vol 94
\issue 10
\pages 744--747
\crossref{https://doi.org/10.1134/S0021364011220127}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=000300146500004}
\elib{https://elibrary.ru/item.asp?id=17974763}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-84856244328}
Linking options:
  • https://www.mathnet.ru/eng/jetpl2384
  • https://www.mathnet.ru/eng/jetpl/v94/i10/p806
    • This publication is cited in the following 9 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
    Statistics & downloads:
    Abstract page:202
    Full-text PDF :53
    References:35
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024