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This article is cited in 2 scientific papers (total in 2 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Valence-band offsets in strained SiGeSn/Si layers with different tin contents
A. A. Bloshkinab, A. I. Yakimovac, V. A. Timofeeva, A. R. Tuktamysheva, A. I. Nikiforovac, V. V. Murashovd a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c Tomsk State University
d Novosibirsk State Technical University
Abstract:
Admittance spectroscopy is used to study hole states in Si$_{0.7-y}$Ge$_{0.3}$Sn$_{y}$/Si quantum wells in the tin content range $y$ = 0.04–0.1. It is found that the hole binding energy increases with tin content. The hole size-quantization energies in structures containing a pseudomorphic Si$_{0.7-y}$Ge$_{0.3}$Sn$_{y}$ layer in the Si matrix are determined using the 6-band $\mathbf{kp}$ method. The valence-band offset at the Si$_{0.7-y}$Ge$_{0.3}$Sn$_{y}$ heterointerface is determined by combining the numerical calculation results and experimental data. It is found that the dependence of the experimental values of the valence-band offsets between pseudomorphic Si$_{0.7-y}$Ge$_{0.3}$Sn$_{y}$ layers and Si on the tin content is described by the expression $\Delta E_{V}^{\operatorname{exp}}$ = (0.21 $\pm$ 0.01)+(3.35 $\pm$ 7.8 $\cdot$ 10$^{-4})y$ eV.
Received: 02.06.2016 Accepted: 14.06.2016
Citation:
A. A. Bloshkin, A. I. Yakimov, V. A. Timofeev, A. R. Tuktamyshev, A. I. Nikiforov, V. V. Murashov, “Valence-band offsets in strained SiGeSn/Si layers with different tin contents”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 342–347; Semiconductors, 51:3 (2017), 329–334
Linking options:
https://www.mathnet.ru/eng/phts6207 https://www.mathnet.ru/eng/phts/v51/i3/p342
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