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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2009, Volume 90, Issue 8, Pages 621–625
(Mi jetpl568)
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This article is cited in 16 scientific papers (total in 16 papers)
CONDENSED MATTER
Excitons in Ge/Si double quantum dots
A. I. Yakimov, A. A. Bloshkin, A. V. Dvurechenskii A. V. Rzhanov Institute of Semiconductor Physics of SB RAS
Abstract:
The spatial structure of excitons and the oscillator strength characterizing the intensity of interband optical transitions in vertically coupled Ge/Si quantum dots have been theoretically studied. It has been found that the probability of the exciton transition under certain conditions (the sizes of the quantum dots, the separation of the dots) can be much larger (up to a factor of 5) than the value for the case of single quantum dots. It is expected that the results will make it possible to approach the creation of efficient light-emitting and photoreceiving devices based on Si and Ge indirect-band semiconductors.
Received: 01.09.2009
Citation:
A. I. Yakimov, A. A. Bloshkin, A. V. Dvurechenskii, “Excitons in Ge/Si double quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 90:8 (2009), 621–625; JETP Letters, 90:8 (2009), 569–573
Linking options:
https://www.mathnet.ru/eng/jetpl568 https://www.mathnet.ru/eng/jetpl/v90/i8/p621
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